On the mechanism of crystal growth orientation of ion beam assisted deposited thin films

Ensinger, W.

doi:10.1016/b978-0-444-82334-2.50031-9

Cited by 1 publication

(2 citation statements)

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“…The films again exhibit a dominant {002} plane because this plane is the closest packing plane and has low-energy the hexagonal structure. 7 However, when the ion beam energy is too high, radiation damage 13,14 can lead to disordering, and energetic ions and/or AlN particles impinge on the film's surface, their momentum to the {002} planes making them less densely packed, like the {100} plane whose c axis is parallel to the substrate. Restated, the film's structure changes from oriented (as the {002} plane is) to randomized (as a mixture of {100} and {002} planes are) since the crystallites are agitated by the kinetic energy of the ions and particles.…”

Section: A Crystallographic Analysismentioning

confidence: 99%

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Aluminum nitride films synthesized by dual ion beam sputtering

Han¹,

Chen

Cheng

et al. 2004

J. Mater. Res.

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Aluminum nitride films were deposited by varying the voltages of argon ion beams from 400 to 1200 V in dual ion beam sputtering. The crystal structure, microstructure, and elemental distributions of the aluminum nitride films were analyzed by x-ray diffraction, field emission scanning electron microscopy, and secondary ion mass spectroscopy, respectively. The aluminum nitride films exhibited the (002) preferred orientation at an optimal ion beam voltage of 800 V. The orientation changed to a mixture of {100} and {002} planes above 800 V, accounting for radiation damage. The thickness of the film increases with increasing ion beam voltage, reaching a steady state value of 210 nm at an ion beam voltage of 1200 V. Under optimal condition (800 V), the c-axis orientation of the aluminum nitride {002} film was obtained with a dense and high-quality crystal structure

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Section: A Crystallographic Analysismentioning

confidence: 99%

“…Re-sputtering causes the input kinetic energy and momentum to be so high that the deposited material is again vaporized by sputtering, reducing the growth velocity and the final thickness of the film. 13,14 As steady state of growth continues when the ion impingement rate equals the sputtering rate. in the chamber.…”

Section: A Crystallographic Analysismentioning

confidence: 99%