On the mechanism of dissipation of energy released in the capture of charge carriers to adsorptive slow states of a semiconductor

Abstract

The influence is investigated of H2O, D2O, CH3OH, CCI4, C6,H14, NH3, and p‐benzoquinone molecules on the kinetics of charge exchange of slow states in the field effect on the germanium surface in the temperature range 250 to 320 K. The results obtained indicate that the molecules weakly sorbed on the semiconductor surface “stimulate” the capture of free charge carriers to slow traps. It is shown that this effect is due to a more rapid dissipation of energy released in the capture events through excitation of the high‐energy vibrational modes of adsorbed molecules. The causes of the abnormally small cross sections for capture of charge carriers by slow surface states are discussed.

On the role of surface phenomena in the Staebler-Wronski effect

“…On this condition the energy released in the recombination of the charge carriers is localized on the adsorbed complex and results in the excitation of the vibrational modes and the heterolytic dissociation of (H,O), molecules. If there is a high molecule concentration, the energy dissipates in the adsorbed phase [20].,) On the other hand, the appearance of the adsorbed water phase with high dielectric constant increases the (H,O),dissociation constant. For these reasons it is unlikely that reversible changes of ud and f?ph in Fig.…”