On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

Saadi, Mohamed; Gonon, P.; Vallée, C.; Mannequin, C.; Grampeix, H.; Jalaguier, E.; Jomni, F.; Bsiesy, A.

doi:10.1063/1.4943776

Cited by 44 publications

(52 citation statements)

References 48 publications

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“…This is the forming process, during which conductive paths are created through the insulating dielectric layer. It is triggered by the forming voltage (V f ), equal to 3.3 V. The current increase at lower voltages is probably due to preliminary redox or diffusion phenomena [20].…”

Section: Methodsmentioning

confidence: 99%

“…Positively biasing this active electrode, oxygen migration, probably in the O 2− form, is enhanced leading to a further reduction of the Al 2 O 3 and an increase of the AlO x contribution (+3.3%). Oxygen migration creates positively charged V O in the alumina, which may have an important role in the formation of conductive filaments by acting as easy ionic diffusion paths in the solid electrolyte [20,22,23].…”

Section: Hard X-ray Photoelectron Spectroscopymentioning

confidence: 99%

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Forming mechanism of Te-based conductive-bridge memories

Mendes

Martínez

Marty

et al. 2018

Applied Surface Science

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International audienceWe investigated origins of the resistivity change during the forming of ZrTe/Al$_2$O$_3$ based conductive-bridge resistive random access memories. Non-destructive hard X-ray photoelectron spectroscopy was used to investigate redox processes with sufficient depth sensitivity. Results highlighted the reduction of alumina correlated to the oxidation of zirconium at the interface between the solid electrolyte and the active electrode. In addition the resistance switching caused a decrease of Zr-Te bonds and an increase of elemental Te showing an enrichment of tellurium at the ZrTe/Al$_2$O$_3$ interface. XPS depth profiling using argon clusters ion beam confirmed the oxygen diffusion towards the top electrode. A four-layer capacitor model showed an increase of both the ZrO$_2$ and AlO$_x$ interfacial layers, confirming the redox process located at the ZrTe/Al$_2$O$_3$ interface. Oxygen vacancies created in the alumina help the filament formation by acting as preferential conductive paths. This study provides a first direct evidence of the physico-chemical phenomena involved in resistive switching of such devices

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Section: Methodsmentioning

confidence: 99%

Section: Hard X-ray Photoelectron Spectroscopymentioning

confidence: 99%

Forming mechanism of Te-based conductive-bridge memories

Mendes

Martínez

Marty

et al. 2018

Applied Surface Science

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“…For instance, the electroforming process for the valence change memory (VCM) based bipolar devices may be polarity dependent due to the built-in asymmetry of the contacts at the top and bottom electrode interfaces as determined by the device design and fabrication procedure 33 . In the case of chemical metallization memory (ECM) 34,35 based devices, the formation of a filament requires the electrochemical dissolution of an active electrode (usually Ag or Cu), followed by the drift of the injected metal cation clusters toward the counter electrode by a positive voltage applied to the active electrode 26,36,37 . Thus, the comparison of the response of these devices to different biasing schemes may provide valuable information for deciphering the nature of resistive switching in a material system.…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…The electrodes employed in memristor-based electronic devices may significantly affect the resistive switching (RS) behavior. For metal-oxide thin-film systems that make use of inert metals as electrodes, the switching mode is mostly bipolar [24][25][26][27][28] , although unipolar operation characteristics have also been demonstrated 18 . In some cases, the mode of operation could be changed between bipolar and unipolar by adjusting the operation conditions 29 or by introducing and tuning the thickness of an oxygen scavenging metal layer 30 .…”

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confidence: 99%

Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

Saylan

Aldosari

Humood

et al. 2020

Sci Rep

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This work provides useful insights into the development of HfO2-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve unique device characteristics. The Ag/HfO2/Si devices have exhibited a larger memory window and self-compliance characteristics. On the other hand, the Au/HfO2/Si devices have displayed substantial cycle-to-cycle variation in the ON-state conductance. These device characteristics can be used as an indicator for the design of resistive-switching devices in various scenes such as, memory, security, and sensing. The current–voltage (I–V) characteristics of Ag/HfO2/Si and Au/HfO2/Si devices under positive and negative bias conditions have provided valuable information on the ON and OFF states of the devices and the underlying resistive switching mechanisms. Repeatable, low-power, and forming-free bipolar resistive switching is obtained with both device structures, with the Au/HfO2/Si devices displaying a poorer device-to-device reproducibility. Furthermore, the Au/HfO2/Si devices have exhibited N-type negative differential resistance (NDR), suggesting Joule-heating activated migration of oxygen vacancies to be responsible for the SET process in the unstable unipolar mode.

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“…[4][5][6] Today, even flash memory has not been able to combine all of these features, especially in terms of writing speed. [23][24][25][26] Nevertheless, to our knowledge, the equilibrium between metal ions and oxygen vacancies dependence on the chosen material and its impact on device performances has never been investigated. For the former, studies have shown the ability of RRAM to operate at sub-µA, [7] while novel integration solutions such as passive crossbars [8] and 3D stacking have been proposed to overcome www.advelectronicmat.de it appeared that material properties such as energy migration barrier of species composing switching filament is linked to HRRAM behavior.…”

Section: Introductionmentioning

confidence: 99%

Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

Sassine

Nail

Blaise

et al. 2018

Adv Elect Materials

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the latter and to achieve extremely high packing density. [9] The understanding of switching mechanisms at device level is a key factor for a technology to be viable at very large scale integration. Different types of resistive memory devices have been studied in the past years such as oxide-based memories (OxRAM) and conductive bridge random access memories (CBRAM). It should be noted that for both technologies it is very challenging to combine good cycling endurance, stable retention and high window margin (WM). Two distinct resistive states can be obtained based on a reversible filament formation (SET operation) and rupture (RESET operation) inside an insulating layer sandwiched between two electrodes; SET operation being the switching from a high resistive state (HRS) to a low resistive state (LRS) and RESET the reverse operation (HRS to LRS). In the case of CBRAM, metal ions coming from top electrode (TE) are introduced in the insulating layer. Working principle is based on a metallic filament formation and dissolution controlling performances. [10] These devices present high WM, relatively low endurance, and poor retention stability. [11,12] In the case of OxRAM, oxygen vacancies creation and annihilation inside the oxide dominates the switching mechanism. [13][14][15] This technology shows low WM combined to high endurance and stable retention. [3,16] While lots of effort have been done lately to improve switching speed and power consumption in RRAM, [17,18] several challenges need to be overcome, namely the high extrinsic (device to device) and intrinsic (cycle to cycle) variability in RRAM characteristics. [7] High WM could potentially help solving this variability by maximizing the ratio of HRS over LRS. Moreover, coupling high WM and high endurance (up to 10 8 cycles required for storage class applications [19] ) remains a critical issue. Combining CBRAM and OxRAM in one hybrid oxide-based CBRAM (hybrid-RRAM (HRRAM)) where filament can be composed of metal ions and oxygen vacancies could offer alternative performances such as high WM coupled with high endurance. Recent studies have identified materials issues in oxide and metal based RRAM. [20,21] However, material properties study is still lacking in HRRAM to guide stack choice (oxide vs electrodes) toward a given application. In a previous work, a trade-off between endurance, window margin, and retention was demonstrated. When comparing various HRRAM electrical performances and filament composition, Here, the impact of copper and oxygen vacancy balance in filament composition as a key factor for oxide-based conductive bridge random access memories (hybrid resistive random access memories (HRRAMs)) performances is investigated. To this aim, several RRAM technologies are studied using various resistive layers and top electrodes. Material analyses allow to highlight the hybrid aspect of HRRAM conductive filament. Density functional theory simulations are used to extract microscopic features and highlight differences from a material point of view. Integr...

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

Cited by 44 publications

References 48 publications

Forming mechanism of Te-based conductive-bridge memories

Forming mechanism of Te-based conductive-bridge memories

Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

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