On the mechanisms of low-frequency noise in vertical silicon pnp BJTs

Cheng, Peng; Zhao, Enhai; Cressler, John D.; Prasad, Jayasimha

doi:10.1117/12.724648

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2007

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“…Noise voltage signals on a metal film base series resistance R BN of 500 kΩ and on a collector series resistance R CN of 1 kΩ were amplified by Perkin Elmer low noise amplifiers (model 5113) and fed to an Agilent 35670A Dynamic Signal Analyzer, covering the frequency range between 1 Hz and 52 kHz, as shown in Fig. 3 [8]. In order to assess any possible degradation in low frequency noise introduced by the folded collector structure, we compared a fully-depleted SiGe HBT-on-SOI with an emitter area A E = 0.16 x 1.6 µm 2 to an equivalent generation bulk vertical SiGe HBT with A E = 0.2 x 1.2 µm 2 .…”

Section: Experiments and Resultsmentioning

confidence: 99%

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1/f noise in SiGe HBTs fabricated on CMOS-compatible thin-film SOI

et al. 2007

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We report, for the first time, the low frequency noise characteristics of both fully-and partially-depleted SiGe HBTs-on-SOI, both in forward and inverse modes of operation. These SiGe HBTs on thin-film SOI are then compared with bulk SiGe HBTs in order to evaluate how the fundamentally different device structure affects 1/f noise performance. In addition, the impact of substrate voltage, collector doping, and temperature on low-frequency noise is investigated.

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Section: Experiments and Resultsmentioning

confidence: 99%

“…The device under test is biased by an Agilent 4155 Semiconductor Parameter Analyzer. All the instruments are computer-controlled[8].…”

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confidence: 99%