On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation

Beránek, Jaroslav; Bulgakov, Alexander V.; Bulgakova, Nadezhda M.

doi:10.3390/app13063818

Cited by 3 publications

(1 citation statement)

References 60 publications

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“…The physical parameters of the QWIP materials are presented in table 2 [17,18]. To simplify the calculation of the complex device structure, it is assumed that the parameters remain constant and do not vary with temperature.…”

Section: Thermal Effect Of Qwip Under Laser Irradiationmentioning

confidence: 99%

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

Sun,

Qian,

Liu

et al. 2024

Phys. Scr.

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The damage effect and mechanism of laser irradiation on long-wave focal plane array (FPA) GaAs/AlGaAs quantum well infrared photodetector (QWIP) were preliminarily explored by using numerical simulation and experiment methods. Piecewise functions were employed to simulate the complex boundary structure of the QWIP, enabling the numerical simulation investigation of mono-pulse, nano-second, long-wave infrared laser irradiation damage effect on the QWIP. The highest QWIP temperature, the highest surface temperature and the maximum circumferential thermal stress were analyzed in relation to laser energy density. The pulse average energy density thresholds of thermal decomposition damage, melting damage and thermal stress-induced damage were theoretically obtained. Preliminary experiments were then conducted by using a mono-pulse, nano-second, 7.2 μm all-solid-state long-wave infrared laser. The experimental results revealed a point-shape damage in QWIP response measurement after the irradiation by a laser pulse of average energy density 1.30 J cm−2, due to the decomposition of GaAs. At a higher average energy density 5.42 J cm−2, both melting and stress-induced damages appeared, with the damage morphology predominantly influenced by stress-induced damage, resulting in the occurrence of blind pixels or the losing of pixels. Furthermore, at laser pulse average energy density 12.48 J cm−2, line-shape damage of the QWIP was observed.

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Section: Thermal Effect Of Qwip Under Laser Irradiationmentioning

confidence: 99%

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

Sun,

Qian,

Liu

et al. 2024

Phys. Scr.

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Combined techniques for recovery of radiation damaged detectors

Ceponis,

Burkanas,

Cicinas

et al. 2023

Materials Science in Semiconductor Processing

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Study on the Performance of Laser Device for Attacking Miniature UAVs

Wu,

Huang,

Wang

et al. 2024

Optics

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In order to test the performance of laser devices for attacking miniature UAVs, we studied the principle of laser devices on soft killing and hard killing. Then, the flight test conditions of miniature UAVs were constructed, and the laser devices were tested and evaluated with the two indexes of maximum jamming range and maximum intercepting range. The first step involves calculating the far-field beam power density corresponding to the unmanned aerial vehicle (UAV) detection equipment and laser device at different distances. Subsequently, the signal electron count received by the UAV detector from the incident laser source target within the integration time tint is computed and compared against the full well charge of the photodetector. This comparison analyzes the UAV detector’s potential for dazzle/blind effects. When the laser device is positioned 600 m from the UAV, the ratio of signal electrons received by the detector to the full well charge was 13.53, indicating that the detector receives signal electrons exceeding the full well charge by over 10 times, thus causing UAV detector blindness. At a distance of 1.2 km from the UAV, this ratio reduces to 2.92, where the detector receives signal electrons around three times the full well charge, causing UAV detector dazzle. Experimental testing determines that the maximum interception distance of this laser device for small, slow-moving UAV equipment is 500 m. Finally, it is proved that the method can effectively test the attacking performance of laser devices, and provides a basis for improving the function and performance of laser devices.

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On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation

Cited by 3 publications

References 60 publications

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

Long-wave infrared laser irradiation damage effect on GaAs/AlGaAs quantum well infrared photodetector

Combined techniques for recovery of radiation damaged detectors

Study on the Performance of Laser Device for Attacking Miniature UAVs

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