1994
DOI: 10.1016/0038-1098(94)90432-4
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On the metallization of the LiF monolayer

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Cited by 2 publications
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“…The band gap values also show large oscillation due to quantum size effect when the film thickness is less than 4 atomic layers. A similar trend has been reported by Juaristi, who conducted a DFT calculation on monolayer LiF and obtain a band gap about 6.9eV, which is also smaller than that of the bulk [80]. The band gap of most semiconductors would increase when the sample size becomes smaller, such as in nano-films, nano-rods or quantum dots [63][64] [71], due to quantum confinement effect.…”
Section: Band Gap From Bulk Calculationssupporting
confidence: 76%
“…The band gap values also show large oscillation due to quantum size effect when the film thickness is less than 4 atomic layers. A similar trend has been reported by Juaristi, who conducted a DFT calculation on monolayer LiF and obtain a band gap about 6.9eV, which is also smaller than that of the bulk [80]. The band gap of most semiconductors would increase when the sample size becomes smaller, such as in nano-films, nano-rods or quantum dots [63][64] [71], due to quantum confinement effect.…”
Section: Band Gap From Bulk Calculationssupporting
confidence: 76%