On the microwave noise figure measurement: A virtual approach for mismatched devices

Caddemi, Alina; Cardillo, Emanuele

doi:10.1016/j.measurement.2019.01.055

Cited by 4 publications

(3 citation statements)

References 18 publications

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“…In this regard, the effect of the different reference planes is not so evident. As a matter of fact, the output shift is strongly reduced by the gain of the DUT, whereas the input line, whose losses are negligible, causes only a limited change in the source reflection coefficient value [17].…”

Section: Experimental Results and Comparisonmentioning

confidence: 99%

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Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise Applications

et al. 2019

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This contribution deals with the microwave linear characterization and noise figure measurement of four on-wafer GaAs pseudomorphic high-electron mobility transistors having scaled gate widths. The proposed measurement campaign has been fulfilled in two different laboratories: The University of Messina, Italy and US Naval Research Laboratory, Washington, DC, USA. Two equivalent approaches have been straightforwardly employed: a standard tuner-based technique and a novel tuner-less technique. The effectiveness of the novel technique has been confirmed as carried out independently by the two laboratories, evidencing the benefits of both techniques. The proposed experimental activity highlights the applicability of the tunerless technique for the noise characterization of advanced on-wafer devices without the constraint imposed by the addition of a source tuner to the standard measurement setup.

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Section: Experimental Results and Comparisonmentioning

confidence: 99%

“…The scattering parameters of the DUTs can be straightforwardly measured by the network analyzer, whereas the determination of the noise parameters requires a complex extraction procedure based on several noise figure measurements [17,18].…”

Section: Tuner-based Measurement Set-up At Unimementioning

confidence: 99%

Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise Applications

et al. 2019

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“…A proprietary procedure, described in [27], has been employed for extracting the 50 Ω noise figure (NF 50 ) of both the amplifier and the transistor. The emitted optical power has been set to 27 mW.…”

Section: Dut and The Measurement Set-upmentioning

confidence: 99%

Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low‐noise amplifier under laser exposure

Caddemi¹,

Cardillo²,

Patanè

et al. 2020

IET Microwaves, Antennas & Propagation

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The aim of this study is to disclose how the performance of a gallium nitride (GaN)‐based X‐band low‐noise amplifier is modified by applying a blue‐ray (404 nm) laser beam. The tested amplifier employs an aluminium gallium nitride/GaN (AlGaN/GaN) high electron mobility transistor on silicon carbide whose dc and noise behaviour have been first analysed with and without optical illumination. Mild improvement of the gain together with severe degradation of the noise figure has occurred during light exposure with the amplifier operating according to the recommended bias condition. Conversely, pronounced improvement of the performance has taken place when the amplifier has been biased close to the transistor pinch‐off point. The results presented in this work follow a previous intense activity carried out on devices and amplifiers based on gallium arsenide technology.

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Optimal Design of an S-Band Low Noise Amplifier

Hai

Wang

Sun

et al. 2020

Lecture Notes in Electrical Engineering

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On the microwave noise figure measurement: A virtual approach for mismatched devices

Cited by 4 publications

References 18 publications

Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise Applications

Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise Applications

Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low‐noise amplifier under laser exposure

Optimal Design of an S-Band Low Noise Amplifier

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