DOI: 10.4203/ccp.99.143
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On the Modelling of the Direct Bonding of Two Silicon Surfaces

Abstract: Direct bonding is a process that does not require the use of any adhesive material. This process is based on short-range interatomic attraction forces such as hydrogen bonds. In this paper, chemical analyses and mechanical tests were performed in order to characterize silicon surfaces and the mechanical resistance of the bonded interfaces formed by these surfaces. Various methods of modelling adhesive contacts in order to predict the mechanical resistance of these assemblies are then compared.

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Cited by 3 publications
(2 citation statements)
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“…The difference in surface energy between non-bonded and debonded surfaces was found to be approximately 20%. Surface wettability and XPS results show the quasi reversibility of the process [28] [30].…”
Section: Wetting Tests and X-ray Spectroscopymentioning
confidence: 99%
“…The difference in surface energy between non-bonded and debonded surfaces was found to be approximately 20%. Surface wettability and XPS results show the quasi reversibility of the process [28] [30].…”
Section: Wetting Tests and X-ray Spectroscopymentioning
confidence: 99%
“…Surface wettability and XPS results confirm the reversibilitywith damagingof the process. [27] Indeed, one characteristic of the direct bonding process when no thermal treatments are applied is the reversibility of the bonding. [28] Figure 6.…”
Section: Wetting Tests and X-ray Spectroscopymentioning
confidence: 99%