On the nature of “sers active sites”

Pettenkofer, C.; Eickmans, J.; Ertürk, Ü.; Otto, A.

doi:10.1016/0039-6028(85)90452-2

Cited by 73 publications

(17 citation statements)

References 46 publications

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“…Am ong the surfaces studied here, only cold Ag is likely to derive a signi® cant fraction of its surface enhancement from the CHEM enhancement m echanism. Otto and co-workers 28,98 have identi® ed a``® rst layer enhancement' ' at coldly deposited m etal ® lms and have proven 54,98 that such an enhancement is provided by a CHEM enhancement m echanism rather than an EM enhancement mechanism. Speci® cally, the``pores' ' present within the structure of coldly deposited metal ® lms are believed to contain sites of atomic-scale roughness, and it is at these SERS``active sites' ' where the CHEM enhancement mechanism of metal±adsorbate charge transfer excitation is proposed to occur.…”

Section: Exp Erim Entalmentioning

confidence: 99%

Surface Enhancement Factors for Ag and Au Surfaces Relative to Pt Surfaces for Monolayers of Thiophenol

et al. 1999

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Raman signal intensities from the 997 cm−1 ring breathing mode of thiophenol monolayers adsorbed at Ag, Au, and Pt surfaces were employed for determination of absolute surface enhancement factors (SEFs). Unlike previous estimations of SEFs, these SEFs are determined by referencing the surface-enhanced Raman scattering (SERS) intensities to the unenhanced Raman scattering at Pt surfaces. The surfaces studied include those commonly prepared in a laboratory ambient and those prepared in vacuum. Surfaces prepared in ambient include polycrystalline Ag electrochemically roughened by an oxidation-reduction cycle (ORC), mechanically polished (MP) polycrystalline Ag, chemically polished (CP) polycrystalline Ag, Ag (111), MP polycrystalline Au, and MP polycrystalline Pt. Vacuum environment surfaces include coldly deposited Ag films (cold Ag) and room temperature-deposited (RT) “thick” Ag films. Each of these thiophenol/metal systems was sampled with an excitation wavelength (λex) of 514.5 nm; MP Au surfaces were also studied with λex of 720 nm. SEFs of 2.0 × 104 for ORC Ag, 5.3 × 103 for MP Ag, 160 for cold Ag, 64 for MP Au720 (λex = 720 nm), 69 for Ag (111), 39 for CP Ag, 7.9 for RT “thick” Ag, and 2.2 for MP Au514.5 (λex 514.5 nm) are observed relative to the SEF of MP Pt, which is assigned as 1. For practical purposes, the significance of the magnitudes of these SEFs is discussed in terms of estimated surface Raman limits of detection (LODs).

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Section: Exp Erim Entalmentioning

confidence: 99%

Surface Enhancement Factors for Ag and Au Surfaces Relative to Pt Surfaces for Monolayers of Thiophenol

et al. 1999

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“…One is the electromagnetic (EM) mechanisms [1,2] arising from an increase in the local electromagnetic field experienced by the adsorbate as a result of surface plasma/optical excitation in the rough features of the metal substrate. The other is chemical (CHEM) mechanisms [3,4] involving a resonant Raman process that occurs via charge transfer between the adsorbate and the metal at sites of atomic-scale roughness [5,6]. Because the SERS effect is a surface phenomenon, the surface morphology and cleanliness play crucial roles in the enhancement of scattering; much experimental effort has been exerted to obtain suitable and reproducible surfaces.…”

Section: Introductionmentioning

confidence: 99%

Improved surfaced-enhanced Raman scattering based on electrochemically roughened silver substrates modified through argon plasma treatment

Wang

Chen

2008

Electrochimica Acta

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“…The electric field enhancement at the interface of the metal nanoparticle and surrounding environment is of great importance for different plasmonic applications including MEF, [ 12,35 ] ME‐SOG, [ 13,37 ] and SERS. [ 37 ] Therefore, we simulated the electric field distribution around the AgBPs under the plane‐wave light with three different orientations as depicted in Figure . As can be observed, the hot spots are formed along the light source polarization direction on the AgBPs corners.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Simulation Study of Right Silver Bipyramids via Seed‐Mediated Growth cum Selective Oxidative Etching Approach

Yaraki

Rezaei

Middha

et al. 2020

Part & Part Syst Charact

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In this study, a simple method to synthesize right silver bipyramid (AgBP) nanostructures via the seed‐mediated growth cum oxidative etching approach in aqueous solution is developed. The key strategy of this method is to control the growth and etching process by careful adjustment of the reactants concentration. Ascorbic acid (AA) is used to reduce silver precursor while cetyltrimethylammonium bromide stabilizer is used to direct the preferential growth of (100) facets. The presence of Cu2+ and AA in the reaction mixture also enable in‐situ generation of H2O2, leading to selective etching of (111) facets, which is crucial to the formation of anisotropic AgBPs. The structure‐properties of AgBPs is systematically investigated through a series of experiments and theoretical simulations. Transmission electron microscope images and X‐ray diffraction patterns of the as‐synthesized AgBPs show the formation of single crystalline twined nanostructures with a relatively high yield. These results suggest the important role of the excitation of electric dipole in enhancing the electric field at the six sharp corners of AgBPs, making them especially promising for a wide range of technological applications including surface‐enhanced Raman scattering with a significant enhancement factor of 1.50 × 105 as demonstrated herein.

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On the nature of “sers active sites”

Cited by 73 publications

References 46 publications

Surface Enhancement Factors for Ag and Au Surfaces Relative to Pt Surfaces for Monolayers of Thiophenol

Surface Enhancement Factors for Ag and Au Surfaces Relative to Pt Surfaces for Monolayers of Thiophenol

Improved surfaced-enhanced Raman scattering based on electrochemically roughened silver substrates modified through argon plasma treatment

Synthesis and Simulation Study of Right Silver Bipyramids via Seed‐Mediated Growth cum Selective Oxidative Etching Approach

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