On the nature of the electric-field effect on YBa2Cu3O7−δ grain boundary junctions employing epitaxial SrTiO3 gate insulators

Windt, M.; Haensel, H.; Koelle, D.; Gross, Rudolf

doi:10.1063/1.123444

Cited by 10 publications

(12 citation statements)

References 14 publications

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“…Using a Ginzburg-Landau-based model it was shown that the I c changes observed by Dong and collaborators are consistent with a field-induced change in the carrier density in the Josephson junction (Betouras et al, 1996). As the measured I c changes were found to scale with the field-dependent, nonlinear dielectric constant of the gate insulator ⑀ r , it was proposed that the effects were caused by an assumed giant piezoelectric effect of the epitaxial SrTiO 3 gate layer (Petersen, Takeuchi, et al, 1995;Windt et al, 1999; see also Grupp and Goldman, 1997). As this hypothesis accounts for neither the small values of the field-induced changes of R n nor the proportionality of the I c changes with ⑀ r , it seems more likely that the electric fringe fields arising from charges embedded in the grain boundaries are affected by the gate field-induced change of ⑀ r .…”

Section: A Applied Electric Fieldsmentioning

confidence: 77%

Grain boundaries in high-Tcsuperconductors

2002

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Since the first days of high-T c superconductivity, the materials science and the physics of grain boundaries in superconducting compounds have developed into fascinating fields of research. Unique electronic properties, different from those of the grain boundaries in conventional metallic superconductors, have made grain boundaries formed by high-T c cuprates important tools for basic science. They are moreover a key issue for electronic and large-scale applications of high-T c superconductivity. The aim of this review is to give a summary of this broad and dynamic field. Starting with an introduction to grain boundaries and a discussion of the techniques established to prepare them individually and in a well-defined manner, the authors present their structure and transport properties. These provide the basis for a survey of the theoretical models developed to describe grain-boundary behavior. Following these discussions, the enormous impact of grain boundaries on fundamental studies is reviewed, as well as high-power and electronic device applications. CONTENTS I. Introduction 485 II. Introduction to Grain Boundaries 486 III. Preparation of Single Grain Boundaries 488 A. Bicrystalline junctions 489 B. Biepitaxial junctions 489 C. Step-edge junctions 491 IV. Structural Properties 491 V. Transport Properties of Grain Boundaries 496 A. Current-voltage characteristics 496 B. Critical current density 498 1. Dependence on grain-boundary angle 498 2. Temperature dependence of the critical currents 502 3. Magnetic-field dependence of the critical currents 502 C. Current-phase relation 504 D. Normal-state resistivity 504 E. The I c R n product 505 F. Grain-boundary capacitance 506 G. Microwave properties 507 H. Grain-boundary noise 507 I. Self-generated magnetic flux 509 J. Penetration of magnetic flux into grain boundaries 510 VI. Effects of Doping 510 VII. Grain-Boundary Mechanisms 511 A. Mechanisms based on structural properties 511 B. Mechanisms based on deviations from ideal stoichiometry 512 C. Order-parameter symmetry-based mechanisms 514 D. Interface charging and band bending 515 E. Mechanisms based on direct suppression of the pairing mechanism 516 VIII. Control of Grain Boundaries with Electric Fields or Quasiparticle Injection 517 A. Applied electric fields 517 B. Quasiparticle injection 518 IX. Irradiation of Grain Boundaries 518 A. Irradiation with electrons 518 B. Irradiation with light 518 C. Irradiation with ions 519 X. Bulk Applications 519 A. Powder-in-tube method 520 B. Coated conductors 520 XI. Applications of Grain Boundaries in Thin Films 522 A. SQUIDs 522 B. Radiation detectors and spectrometers 524 C. Three-terminal devices 525 D. Superconducting logic circuits 526 E. Research devices 526 XII. Summary and Outlook 528 Acknowledgments 529 References 529

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Section: A Applied Electric Fieldsmentioning

confidence: 77%

Grain boundaries in high-Tcsuperconductors

2002

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“…In figure 3 we present the result for the surface critical field (18) versus the external bias (4). We see that the external bias can enhance or decrease the surface critical value depending on the field direction.…”

Section: Surface Critical Fieldmentioning

confidence: 97%

Surface energy and magnetocapacitance of superconductors under electric field bias

et al. 2008

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A superconducting layer exposed to a perpendicular electric field and a parallel magnetic field is considered within the Ginzburg-Landau (GL) approach. The GL equation is solved near the surface and the surface energy is calculated. The nucleation critical field of superconducting state at the surface depends on the magnetic and electric fields. Special consideration is paid to the induced magnetic-field effect caused by diamagnetic surface currents. The latter effect is strongly dependent on the thickness of the sample. The effective inverse capacitance determines the effective penetration depth. It is found that the capacitance exhibits a jump at the surface critical field. An experiment is suggested for determining the change in the effective capacitance of the layer.

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“…The results revealed that the degraded SrTiO 3 layer is very thin and the dielectric constant of the SrTiO 3 film was dominated by that of single-crystal-like SrTiO 3 layer. For most high temperature superconducting devices such as the field effect transistor (FET), [1][2][3][4][5] a highly epitaxial insulation layer sandwiched between superconducting films is necessary. To obtain a large magnitude of the electric field effect in FET's, both a high breakdown electric field E d and a high dielectric constant " r are required for the gate insulator.…”

Section: Structure and Dielectric Behavior Of Epitaxially Grown Srtiomentioning

confidence: 99%

“…However, even this value is only a half of that of the STO single crystal. The development of STO films with larger dielectric constants is substantial for the future application, 3,[15][16][17] since the seriously depressed " r limits the area of applications of STO thin films.…”

Section: Structure and Dielectric Behavior Of Epitaxially Grown Srtiomentioning

confidence: 99%

Structure and Dielectric Behavior of Epitaxially Grown SrTiO₃Film between YBa₂Cu₃O_7-δElectrodes

Takashima

Wang

Okano

et al. 2004

Jpn. J. Appl. Phys.

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On the nature of the electric-field effect on YBa2Cu3O7−δ grain boundary junctions employing epitaxial SrTiO3 gate insulators

Cited by 10 publications

References 14 publications

Grain boundaries in high-Tcsuperconductors

Grain boundaries in high-Tcsuperconductors

Surface energy and magnetocapacitance of superconductors under electric field bias

Structure and Dielectric Behavior of Epitaxially Grown SrTiO₃Film between YBa₂Cu₃O_7-δElectrodes

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On the nature of the electric-field effect on YBa2Cu3O7−δ grain boundary junctions employing epitaxial SrTiO3 gate insulators

Cited by 10 publications

References 14 publications

Grain boundaries in high-Tcsuperconductors

Grain boundaries in high-Tcsuperconductors

Surface energy and magnetocapacitance of superconductors under electric field bias

Structure and Dielectric Behavior of Epitaxially Grown SrTiO3Film between YBa2Cu3O7-δElectrodes

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Product

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Structure and Dielectric Behavior of Epitaxially Grown SrTiO₃Film between YBa₂Cu₃O_7-δElectrodes