A fixed-bed reactor was employed to study the methylchlorosilane (MCS) reaction, also called
the direct process. We used a copper−silicon contact mass as the main MCS catalyst. The copper−silicon contact mass was prepared by the reaction of CuCl with silicon. The effect of added zinc
and phosphorus to the MCS reaction was explored, and we found that, at Cu/Zn ratios > 30,
phosphorus addition resulted in an increase in selectivity for dimethyldichlorosilane (Di) at the
expense of methyltrichlorosilane (Tri) and residue. Addition of tin to the MCS reaction resulted
in an increased overall rate but with a decrease in Di and an increase in disilane formation.
Addition of phosphorus and high tin levels resulted in a high rate but with a high selectivity for
Di; phosphorus negated the selectivity penalty caused by the addition of tin alone. Phosphorus
appeared to cause an increase in formation of the eta phase (Cu3Si), as determined by analysis
of MCS beds formed under different conditions. Previously reported arguments show that copper
diffusion is operative for Cu−Si renewal in MCS but that Cu diffusion is not the rate-limiting
step in the reaction.