On the noise spectra of semi-conductor noise and of flicker effect

Ziel, A. van der

doi:10.1016/0031-8914(50)90078-4

Cited by 283 publications

(111 citation statements)

References 9 publications

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“…For a broad uniform distribution of pulse duration times, this leads to the erroneous but widely cited conclusion that this process is capable of producing 1/ω-type spectra. [95][96][97][98][99][100] On the other hand, it has been established that truncated power law pulse shapes may lead to pink noise, with such processes commonly referred to as fractal shot noise. 94…”

Section: Discussionmentioning

confidence: 99%

Auto-correlation function and frequency spectrum due to a super-position of uncorrelated exponential pulses

Garcia

Theodorsen

2017

Physics of Plasmas

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The auto-correlation function and the frequency power spectral density due to a super-position of uncorrelated exponential pulses are considered. These are shown to be independent of the degree of pulse overlap and thereby the intermittency of the stochastic process. For constant pulse duration and a one-sided exponential pulse shape, the power spectral density has a Lorentzian shape which is flat for low frequencies and a power law at high frequencies. The algebraic tail is demonstrated to result from the discontinuity in the pulse function. For a strongly asymmetric two-sided exponential pulse shape, the frequency spectrum is a broken power law with two scaling regions. In the case of a symmetric pulse shape, the power spectral density is the square of a Lorentzian function. The steep algebraic tail at high frequencies in these cases is demonstrated to follow from the discontinuity in the derivative of the pulse function. A random distribution of pulse durations is shown to result in apparently longer correlation times but has no influence on the asymptotic power law tail of the frequency spectrum. The effect of additional random noise is also discussed, leading to a flat spectrum for high frequencies. The probability density function for the fluctuations is shown to be independent of the distribution of pulse durations. The predictions of this model describe the variety of auto-correlation functions and power spectral densities reported from experimental measurements in the scrape-off layer of magnetically confined plasmas.

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Section: Discussionmentioning

confidence: 99%

Auto-correlation function and frequency spectrum due to a super-position of uncorrelated exponential pulses

Garcia

Theodorsen

2017

Physics of Plasmas

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“…It is thermally annealed and then protected from light. We observe and analyze the voltage noise spectra at frequencies f ϭ1 -10 4 Hz and temperatures T ϭ340-434 K in the presence of electric current flowing perpendicular to the plane of the film. Other details of our experimental setup are described in Ref.…”

Section: Methodsmentioning

confidence: 99%

Long-range potential fluctuations and1/fnoise in hydrogenated amorphous silicon

Fine

Dijkhuis

2003

Phys. Rev. B

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We present a microscopic theory of the low-frequency voltage noise ͑known as ''1/f '' noise͒ in m-thick films of hydrogenated amorphous silicon. This theory traces the noise back to the long-range fluctuations of the Coulomb potential created by deep defects, thereby predicting the absolute noise intensity as a function of the distribution of defect activation energies. The predictions of this theory are in very good agreement with our own experiments in terms of both the absolute intensity and the temperature dependence of the noise spectra.

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“…An obvious way to generate a 1/f spectrum is to superimpose a large number of Lorentzians with a suitable distribution D( ) of characteristic times . 21 For thermally activated random processes, Dutta, Dimon, and Horn 22 developed a model to extract, under certain restrictions, an energy barrier distribution from a given spectrum. A pure 1/f spectrum emerges when a flat distribution of activation energies is present.…”

Section: A Dutta-dimon-horn Approachmentioning

confidence: 99%

Resistance fluctuations in hydrogenated amorphous silicon: Thermal equilibrium

Verleg

Dijkhuis

1998

Phys. Rev. B

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Resistance noise measurements are presented of intrinsic hydrogenated amorphous silicon films as a function of voltage and temperature in the dark. The noise displays Gaussian statistics pointing to a large number of independent noise sources. It is demonstrated that the spectral dependence and temperature dependence are the result of a large number of independent thermally activated fluctuators. A distribution of activation energies for the characteristic rates is obtained from the measurements that peak at 0.85 eV with a full width at half maximum of ϳ0.2 eV. The attempt rate amounts to 7ϫ10 12 s Ϫ1 . We discuss general mechanisms for mobility fluctuations and number fluctuations due to generation and recombination of free carriers. A model for generation-recombination noise in a semiconductor with localized electronic states distributed throughout the mobility gap appears consistent with both the variance of the fluctuations and the temperature dependence of the rate constants. We identify the activation energy and attempt rate as the barrier limiting thermal emission of holes from defect states to the valence band. The width of the distribution of activation energies points to inhomogeneous broadening due to band bending. Light-induced metastable changes in the material are observed to affect the variance quite significantly. The present measurements and analysis of the noise under equilibrium conditions pave the way to successfully examine nonthermal equilibrium fluctuations in the photoconductivity and under injection conditions, which is the subject of the accompanying paper in this volume.

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On the noise spectra of semi-conductor noise and of flicker effect

Cited by 283 publications

References 9 publications

Auto-correlation function and frequency spectrum due to a super-position of uncorrelated exponential pulses

Auto-correlation function and frequency spectrum due to a super-position of uncorrelated exponential pulses

Long-range potential fluctuations and1/fnoise in hydrogenated amorphous silicon

Resistance fluctuations in hydrogenated amorphous silicon: Thermal equilibrium

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