On the occurrence of {113}; facets on CVD-grown diamond

Janßen, G.; Schermer, J.J.; Enckevort, W.J.P. van; Giling, L.J.

doi:10.1016/0022-0248(92)90318-d

Cited by 32 publications

(19 citation statements)

References 17 publications

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“…However, the surface coverage decreases upon lowering the applied supersaturation of hydrocarbon species in the gas phase and upon increasing deposition temperatures so that desorption of the species from the surface becomes important [10]. Under these conditions the orientations corresponding with the most pronounced minima in Fig, 2a might appear as flat facets as was confirmed by the occurrence of {113} facets on flame deposited diamond single crystals at temperatures around 1200°C [4,7].…”

Section: Theory Of Surface Stabilizationmentioning

confidence: 76%

“…Along the perimeter of the flame deposited {110} samples generally flat {111} and {001} facets are observed with curved bands of macrosteps along (110) between them [4,5]. These curved bands have sharp rims with the {111} side faces, but show a gradual transition towards the {001} faces (see Fig.…”

Section: Growth On {110} Substratesmentioning

confidence: 98%

“…In contrast to this description, besides the {111} facets also flat {001} facets are observed on diamond layers obtained by chemical vapour phase deposition [2][3][4][5][6][19][20][21]. The presence of these facets was explained by a very persistent (2 × 1) surface reconstruction due to the formation of dimer bonds, which gives a significant decrease in dangling bond density and creates a positive step free energy [22][23][24].…”

Section: Theory Of Surface Stabilizationmentioning

confidence: 98%

“…Recently homoepitaxial diamond growth by the acetylene-oxygen combustion flame technique [1] was reported on cylindrically shaped type IIa natural diamond substrates with {001}, {110} and {111} top faces [2][3][4][5][6][7]. Infrared, Raman and luminescence spectroscopy demonstrated that the quality of the {001} and {111} samples is comparable to that of type IIa natural diamond, although ment of microfacets.…”

Section: Introductionmentioning

confidence: 99%

“…Even for diamond growth, which is considered to be a process far from equilibrium, the model proved to be. successful in the qualitative description of the temperature dependent occurrence of {113} facets on homoepitaxially grown single crystals [4]. In the present study a model will be derived according to the same principles which gives a more detailed description of the possible two-dimensional stabilization for a discrete number of surfaces with orientations between {113} and {001} in the (110) zones.…”

Section: Introductionmentioning

confidence: 99%

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Orientation dependent surface stabilization on flame deposited diamond single crystals

Schermer

Enckevort

Giling

1995

Journal of Crystal Growth

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In this study a model for the orientation dependent surface stabilization of diamond grown from the vapour phase is presented. The model is based on a first order broken bond analysis of the diamond crystal with additional considerations about surface reconstruction by dimer formation. Due to the formation of dimers, surface stabilization is expected for orientations corresponding to Miller indices {hhk} h < k in the (110) zones. It is demonstrated that this model gives a good description of growth phenomena like facets, curved bands and microfaceting, observed on homoepitaxially grown diamond samples. These specimens are obtained by flame deposition on cylindrical type IIa natural diamond substrates with {111}, {110} or {001} top faces. In conformation with the model the surfaces {hhk}h < k between {111} and {113} appear to be stabilized in one direction, while a discrete number of orientations between {113} and {001} are subject to two-dimensional stabilization. All other surfaces are stabilized by the development of microfacets which also have orientations close to {hhk} h <_ k, as was determined by laser reflectometry. In addition it is shown that differences in the orientation dependent incorporation of nitrogen as nitrogen-vacancy pairs in the diamond lattice is consistent with the described model. For this purpose a single crystalline diamond layer grown on top of a hemispherical diamond substrate by the flame technique was investigated by cathodoluminescence topography.

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Section: Theory Of Surface Stabilizationmentioning

confidence: 76%

Section: Growth On {110} Substratesmentioning

confidence: 98%

Section: Theory Of Surface Stabilizationmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Orientation dependent surface stabilization on flame deposited diamond single crystals

Schermer

Enckevort

Giling

1995

Journal of Crystal Growth

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3D crystal growth model for understanding the role of plasma pre‐treatment on CVD diamond crystal shape

Silva

Achard

Bonnin

et al. 2006

Physica Status Solidi (a)

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The progress that has been achieved over the past few years on the growth of thick and high purity homo‐epitaxial single crystal diamond by chemical vapour deposition (CVD) has opened a wide range of possible applications in areas such as optics or power electronics. Recently, high quality single crystals were produced at LIMHP with growth rates close to 20 µm/h using relatively high microwave power density, both in continuous and pulsed mode [1, 2]. However, these results are conditioned by the use of an in‐situ etching of the diamond substrate prior to growth using a H2/O2 plasma. This pre‐treatment results in better and smoother morphologies of the homoepitaxial diamond layer [3] compared to growth on an untreated substrate. Moreover, the initial quality of the diamond substrate was demonstrated to be critical for the final morphology of the CVD epitaxial film. Still, the impact of surface defects on the initial diamond substrate and the role of the pre‐treatment on the final morphology of the grown film remained partially unclear. Indeed, diamond homoepitaxial growth on untreated substrates leads to unexpected morphology and geometry of the crystal. To explain these observations, a 3D purely geometrical growth model has been developed, involving the growth rate of (100), (111), as well as (110) and (113) faces. The model provi‐ des a consistent explanation of the substrate pre‐treatment effect on the growth and morphology of the crystal. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of CVD Diamond for Electronic Applications

Plano

1995

Diamond: Electronic Properties and Applications

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On the occurrence of {113}; facets on CVD-grown diamond

Cited by 32 publications

References 17 publications

Orientation dependent surface stabilization on flame deposited diamond single crystals

Orientation dependent surface stabilization on flame deposited diamond single crystals

3D crystal growth model for understanding the role of plasma pre‐treatment on CVD diamond crystal shape

Growth of CVD Diamond for Electronic Applications

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