On the optical properties of bismuth oxide thin films prepared by pulsed laser deposition

Leontie, Liviu; Caraman, Mihail; Visinoiu, Alina; Rusu, G.I.

doi:10.1016/j.tsf.2004.07.061

Cited by 127 publications

(61 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Over the past decade, a new photocatalyst bismuth oxide attracted increasing attention of their promising candidate for the visible light-activated photocatalyst due to their following advantages: (i) Bi 2 O 3 with band gaps varying from 2 to 3.96 eV has optical absorption in the visible region [1][2][3]. (ii) Its intrinsic polarizabilities are favorable for the separation of photo-generated electron-hole pairs and the transfer of these charge carriers [4].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and photocatalytic property of α-Bi2O3 nanoparticles by femtosecond laser ablation in liquid

Geng

Tan

Luo

et al. 2010

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Fabrication and photocatalytic property of α-Bi2O3 nanoparticles by femtosecond laser ablation in liquid

Geng

Tan

Luo

et al. 2010

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…[6][7][8][9] Bismuth oxide has four main polymorphic forms; α-, β-, δ-, and -Bi 2 O 3 . Each polymorph possesses different crystal structures and various electrical, optical and mechanical properties.…”

mentioning

confidence: 99%

Formation of Bismuth Nanocrystals in Bi₂O₃Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Eom

Jung

Han

et al. 2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Bismuth nanocrystals were embedded in amorphous Bi2O3 thin films grown under a nitrogen atmosphere at room temperature using pulsed laser deposition. As-grown Bi2O3-Bi thin films showed a high electrical conductivity of approximately 769 S/cm at 320 K, and the samples annealed in two steps at 200 and 300°C consisted of amorphous Bi2O3, bismuth nanocrystals in the crystallized β-Bi2O3 phase. The mixture phase of the bismuth nanocrystals and β-Bi2O3 enhanced the thermoelectric properties at room temperature. Samples annealed in two steps at 200 and 300°C showed an electrical conductivity of 833 S/cm, a Seebeck coefficient of –110 μV/K, a power factor of about 1.05 × 10−3 W/K2m. Formation of the bismuth nanocrystals in Bi2O3 thin films at low temperature made thermoelectric applications possible.

show abstract

“…Thin films of bismuth oxides have been obtained using such methods as electrodeposition, * E-mail: meydaneri@yahoo.com thermal evaporation under vacuum, sol-gel, pulsed laser deposition, etc., and their optical properties, formation of different phases and phase relations have been investigated [14][15][16][17][18][19][20][21]. However, none of them is as simple and economical as the method described in this study.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Tezel

Kariper

2017

Materials Science-Poland

View full text Add to dashboard Cite

Bismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06 × 10 −4 line/nm 2 , 31.25 × 10 −3 1/nm 2 , respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (E g ) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (n r ), extinction coefficient (k), dielectric constant ( ) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.

show abstract

On the optical properties of bismuth oxide thin films prepared by pulsed laser deposition

Cited by 127 publications

References 21 publications

Fabrication and photocatalytic property of α-Bi2O3 nanoparticles by femtosecond laser ablation in liquid

Fabrication and photocatalytic property of α-Bi2O3 nanoparticles by femtosecond laser ablation in liquid

Formation of Bismuth Nanocrystals in Bi₂O₃Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Contact Info

Product

Resources

About

On the optical properties of bismuth oxide thin films prepared by pulsed laser deposition

Cited by 127 publications

References 21 publications

Fabrication and photocatalytic property of α-Bi2O3 nanoparticles by femtosecond laser ablation in liquid

Fabrication and photocatalytic property of α-Bi2O3 nanoparticles by femtosecond laser ablation in liquid

Formation of Bismuth Nanocrystals in Bi2O3Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Contact Info

Product

Resources

About

Formation of Bismuth Nanocrystals in Bi₂O₃Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications