On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy

Sadeghi, Ida; Tam, Man Chun; Wasilewski, Z. R.

doi:10.1116/1.5089919

Cited by 6 publications

(10 citation statements)

References 36 publications

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“…[9][10][11][12][13][14][15][16] Similarly, several papers explore the MBE parameters for homoepitaxy of InP(111), as well as for heteroepitaxy of its technologically relevant latticematched alloys, In 0:52 Al 0:48 As and In 0:53 Ga 0:47 As. 4,[17][18][19] In contrast, few studies exist concerning the growth of InAs(111)A. [20][21][22][23] Reference 20 demonstrates rough InAs(111)A surfaces covered in a high density of hillocks, while Refs.…”

Section: Introductionmentioning

confidence: 99%

InAs(111)A homoepitaxy with molecular beam epitaxy

Vallejo

Garrett

Sautter

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors have established a robust set of growth conditions for homoepitaxy of high-quality InAs with a (111)A crystallographic orientation by molecular beam epitaxy (MBE). By tuning the substrate temperature, the authors obtain a transition from a 2D island growth mode to step-flow growth. Optimized MBE parameters (substrate temperature ¼ 500 C, growth rate ¼ 0:12 ML=s, and V=III ratio ! 40) lead to the growth of extremely smooth InAs(111)A films, free from hillocks and other 3D surface imperfections. The authors see a correlation between InAs surface smoothness and optical quality, as measured by photoluminescence spectroscopy. This work establishes InAs(111)A as a platform for future research into other materials from the 6.1 Å family of semiconductors grown with a (111) orientation.

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Section: Introductionmentioning

confidence: 99%

InAs(111)A homoepitaxy with molecular beam epitaxy

Vallejo

Garrett

Sautter

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…For the growth of InGaAs on InP(111)B, we showed that a minimum misorientation angle of 0.4°is needed to avoid surface hillocks at the optimized growth conditions. 20 However, the optimum misorientation angle for InAlAs on InP(111)B was not optimized.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…In our previous study, we showed that the smooth epitaxy could occur on optimally misoriented substrates regardless of the misorientation direction. The misorientation direction only affects the shape of the hillocks (i.e., being completely symmetric or asymmetric) . The [2̅11] direction was used since the facets of the pyramids are tilted toward <2̅11> azimuthal directions. , …”

Section: Resultsmentioning

confidence: 99%

Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices

Sadeghi

Pofelski

Farkhondeh

et al. 2022

ACS Appl. Nano Mater.

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Research into Zinc Blende III–V compound semiconductors has focused almost entirely on growth on (001)-oriented substrates for more than five decades. This is because high-quality epitaxial layers can be achieved relatively smoothly when III–Vs are grown on (001) substrates. However, emerging technologies generated renewed interest in the growth of high-quality III–Vs on (111)-oriented substrates. Prime examples of these applications are devices based on spin transport, and low-anisotropy tensile-strained quantum dots for quantum computing applications. Growth on (111) substrates could also help understand the growth of complex chalcogenides. Exploring these applications requires high-quality epitaxial thin films on (111) substrates. Here, we demonstrate for the first time the atomically smooth and defect-free growth of nanoscale InGaAs/InAlAs superlattice on InP(111)-oriented substrate using molecular beam epitaxy (MBE). This was achieved by optimizing the substrate misorientation angle and growth conditions. The growth optimization was guided by scanning transmission electron microscopy Moiré geometrical phase analysis and density functional theory calculations. It is shown that ensuring the step-flow growth mode for each ternary layer is the most effective way of achieving high-quality epitaxial structures on (111)-oriented substrates. This work sets the stage for developing InGaAs/InAlAs/InP(111) electronic and photonic structures with properties that can be tuned with strain-mediated piezoelectric field engineering in high-quality epitaxial thin films. The reported observations should help optimize epitaxy in other Zinc Blende material systems for the structure that could benefit from the tunable piezoelectric effects.

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“…Optimized MBE growth conditions for InGaAs and InAlAs on InP(111)A are discussed elsewhere. 15,26,27 To grow the Ge TSQDs, we adjusted T sub for TSQD growth under As 4 , closed the arsenic shutter and valve, waited 1 min, and then opened the Ge shutter. 17 Previous studies have shown that the InAlAs(111)A surface is thermally stable at these temperatures, even when the arsenic flux is removed for a short time.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…We grew both InGaAs and InAlAs at a substrate temperature ( T sub ) of 510 °C, with a V/III beam equivalent pressure (BEP) ratio of 160. Optimized MBE growth conditions for InGaAs and InAlAs on InP(111)A are discussed elsewhere. ,, …”

Section: Experimental Methodsmentioning

confidence: 99%

Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A

Sautter

Schuck

Smith

et al. 2021

Crystal Growth & Design

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Quantum dots that store large tensile strains represent an emerging research area. We combine experiments and computational modeling to investigate the self-assembly of Ge and GaAs tensile-strained quantum dots (TSQDs) on In0.52Al0.48As(111)A. Comparing these two nominally similar material systems highlights how differences in adatom kinetics leads to distinct features of Ge and GaAs TSQD self-assembly. The energy barrier to diffusion of Ge adatoms is higher than that for Ga adatoms, while forming a stable island requires six Ge atoms and four Ga atoms. Unusually, these critical cluster sizes do not increase as we raise the substrate temperature. Radial distribution scaling shows that both Ge and GaAs TSQDs preferentially nucleate at a particular distance from their neighbors. This deeper understanding of the physics of Ge(111) and GaAs(111)A TSQD self-assembly will enable researchers to more effectively tailor these nanostructures to specific optoelectronic applications.

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On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy

Cited by 6 publications

References 36 publications

InAs(111)A homoepitaxy with molecular beam epitaxy

InAs(111)A homoepitaxy with molecular beam epitaxy

Atomically Smooth Defect-Free III-As Heterostructures on InP(111) Substrate for Next-Generation Electronic Devices

Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A

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