On the order of convergence of a semigroup to the identity operator

Electrical and optical properties of Hg3In2Te6 single crystals

“…The resistivity of this material and charge carrier concentration at room temperature are equal to ρ = (1-4)×10 3 Ω⋅cm and n =(3-5)×10 13 cm -3 , respectively [4]. The charge carrier mobility is in the range from 40-50 to 200-250 cm 2 ⋅V -1 ⋅s -1 and, in the majority of cases, changes only slightly with temperature.…”

The modification of electrical properties of Au/n-Hg3In2Te6 Schottky contact by the introduction of ITO interlayer

“…Although the ITO/MIT photodiode has been fabricated, it was difficult to obtained the stable performance of ITO/MIT photodiode, which is due to that MIT is a defect crystal with a large number of vacancies (Hg 2þ ) and insensitive to doping [1,3]. Therefore, the main structure of MIT photoelectric detector is using Schottky contact between metal and semiconductor (MS).…”

Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors

“…Being a novel potential near infrared detector material, mercury indium telluride (Hg 3 In 2 Te 6 , MIT) single crystal attracts more attentions due to its special features of electrical inactivity of the dopants [1], low defect migration energy [2], and electrical stability to a very high dose of gamma and neutron radiation [3]. Because of the special structure with high concentration structural vacancies (about 10 21 cm À 3 ), high mercury pressure and complex phase transformation [4][5][6][7][8], barriers were encountered during the crystal growth of MIT ingots.…”