On the origin of sensing properties of the nanostructured layers of semiconducting metal oxide materials

Zaretskiy, N. P.; Men’shikov, L. I.; Vasiliev, Alexey

doi:10.1016/j.snb.2011.03.064

Cited by 44 publications

(30 citation statements)

References 27 publications

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“…For this reason we have to consider the hypothesis of small grains, and we expect a behavior different from other perovskitic material [53]. As discussed above when the grain dimension goes below a certain critical dimension [54] the influence of the grain geometry becomes important and strongly influences the sensor response. In a previous work the case of nanowire was treated by the authors [44].…”

Section: Figure 7 About Herementioning

confidence: 98%

Gas sensing properties and modeling of YCoO3 based perovskite materials

Addabbo

Bertocci

Fort

et al. 2015

Sensors and Actuators B: Chemical

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Section: Figure 7 About Herementioning

confidence: 98%

Gas sensing properties and modeling of YCoO3 based perovskite materials

Addabbo

Bertocci

Fort

et al. 2015

Sensors and Actuators B: Chemical

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“…вставку на рис. 6, b) [3,4]. Авторы работы [5] прыжковый механизм проводимости связывают с проводимостью по разупорядоченным границам зерен.…”

Section: результаты и их обсуждениеunclassified

Структура И Свойства Пленок Оксида Галлия, Полученных Высокочастотным Магнетронным Напылением

Калыгина¹,

Лыгденова²,

Новиков³

et al. 2019

Физика И Техника Полупроводников

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The properties of gallium-oxide films produced by the radio-frequency magnetron-assisted sputtering of a β-Ga_2O_3 target with deposition onto sapphire substrates are studied. The as-deposited gallium-oxide films are polycrystalline and contain crystallites of the α and β phases. Exposure to oxygen plasma does not bring about the appearance of new crystallites but makes crystallites several times larger in average dimensions in the substrate plane. After annealing at 900°C, the crystallite size becomes twice as large as that in the unannealed film. The films not subjected to thermal annealing exhibit a high resistance at 20°C. In the range of 50–500°C, the conductivity of the samples ( G ) only slightly depends on temperature ( T ) and, as T is elevated further, exponentially increases with the activation energy 0.7–1.0 eV. After annealing of the films in argon at 900°C (30 min), the conductivity G starts to sharply increase at T ≈ 350°C. In the dependence of ln G on T ^–1, a maximum in the range of 470–520°C and a portion of decreasing conductivity at higher temperatures are observed. The unusual temperature dependence of the conductivity after annealing is attributed to a change in the structure and phase composition of polycrystalline gallium-oxide films and, possibly, to some effects at the surface. The structures produced on insulating substrates are solar blind in the visible wavelength region and sensitive to radiation in the ultraviolet region (222 nm).

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“…Silver-o xygen system (AgO) was extensively attracted by researchers due to its novel applications in high density optical storage devices, gas sensors, photovoltaic cells, photo diodes, and antibacterial coatings [1][2][3][4][5][6]. This system exists in d ifferent defined compounds, namely, Ag 2 …”

Section: Electrical Resistivity Of Agomentioning

confidence: 99%

“…Therefore, grind ings, sanding, and pulverizing the material should be avoided. [5] Berylliu m o xide is chemically inert and completely safe to use in its fired state. Handling of finished parts presents absolutely no health hazards .…”

Section: Introductionmentioning

confidence: 99%

Review on Electrical Resistivity of Oxide Materials Using Fuzzy Logic

2015

IJAERD

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On the origin of sensing properties of the nanostructured layers of semiconducting metal oxide materials

Cited by 44 publications

References 27 publications

Gas sensing properties and modeling of YCoO3 based perovskite materials

Gas sensing properties and modeling of YCoO3 based perovskite materials

Структура И Свойства Пленок Оксида Галлия, Полученных Высокочастотным Магнетронным Напылением

Review on Electrical Resistivity of Oxide Materials Using Fuzzy Logic

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