On the origin of the impurity Kondo-like resistivity component of UAsSe ferromagnets

Henkie, Z.; Cichorek, T.; Pietraszko, A.; Fabrowski, R.; Wojakowski, A.; Kuzhel, B.; Kępiński, Leszek; Krajczyk, L.; Gukasov, A.; Wiśniewski, Piotr

doi:10.1016/s0022-3697(97)00197-2

Cited by 30 publications

(21 citation statements)

References 28 publications

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“…Our previous works point to intrinsic structural disorder in single crystals of the PbFCl-type arsenide selenides UAsSe, ThAsSe and ZrAs 1.40 Se 0.50 , as inferred from X-ray and electron diffraction as well as transmission electron microscopy studies [4,5]. This structural disorder is held responsible for the formation of two-level systems that are the cause of glass-type temperature dependencies of both the thermal conductivity and the specific heat in the millikelvin temperature range [6].…”

Section: Introductionmentioning

confidence: 94%

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Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Schlechte

Niewa

Schmidt

et al. 2007

Science and Technology of Advanced Materials

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Ternary phases in the systems Zr-As-Se and Zr-As-Te were studied using single crystals of ZrAs 1.40(1) Se 0.50(1) and ZrAs 1.60(2) Te 0.40(1) (PbFCl-type of structure, space group P4/nmm) as well as ZrAs 0.70(1) Se 1.30(1) and ZrAs 0.75(1) Te 1.25(1) (NbPS-type of structure, space group Immm). The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAs x Te 2Àx , with 1.53(1)pxp1.65(1) (As-rich) and 0.58(1)pxp0.75(1) (Te-rich). Both phases are located directly on the tie-line between ZrAs 2 and ZrTe 2 , with no indication for any deviation. Similar is true for the Se-rich phase ZrAs x Se 2Àx with 0.70(1)pxp0.75(1). However, the compositional range of the respective As-rich phase ZrAs xÀy Se 2Àx (0.03(1)pyp0.10(1); 1.42(1)pxp1.70(1)) is not located on the tie-line ZrAs 2 -ZrSe 2 , and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs 0.75 Se 1.25 , from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures 420 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs 1.40 Se 0.50 , which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure. r

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Section: Introductionmentioning

confidence: 94%

“…In the case of ZrAs 1.40 Se 0.50 , measurements have been extended to 0.12 K using a 3 He- 4 He dilution refrigerator equipped with an LR-700 ac resistance bridge. Electrical contact pads were made by electrochemical deposition of copper.…”

Section: Physical Measurementsmentioning

confidence: 99%

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Schlechte

Niewa

Schmidt

et al. 2007

Science and Technology of Advanced Materials

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“…It was argued that the Kondo-like resistivity behavior arises in UPS and UAsSe due to anion disorder, i.e. because of mixed atomic occupancy of some crystallographic sites [6,10,12].…”

Section: Introductionmentioning

confidence: 99%

Electrical transport properties of USbSe and USbTe

Kaczorowski

Pikul

Zygmunt

2005

Journal of Alloys and Compounds

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“…Ever since the initial discovery of these unusual low-temperature transport properties in UAsSe, there has been much interest in the Kondo scattering mechanism/s responsible [1][2][3][4][5][6][7][8][9][10]. The fact that UAsSe becomes ferromagnetic below T c B110 K [2] initially suggested a scattering mechanism of magnetic origin related to the original Kondo effect [11].…”

Section: Introductionmentioning

confidence: 99%

“…1) displayed qualitatively very similar behavior to UAsSe (above 109 K) with negative dr=dT from about 70 up to about 500 K [1], however, ruled out a scattering mechanism of magnetic origin. More recent examination of the magnetoresistivity of UAsSe at liquid He temperature [8][9][10] likewise suggests that the dominant scattering mechanism in both materials is of a structural rather than magnetic origin.…”

Section: Introductionmentioning

confidence: 99%

A low-temperature electron diffraction study of structural disorder and its relationship to the Kondo effect in ThAsSe

Withers

Vincent

Schoenes

2004

Journal of Solid State Chemistry

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On the origin of the impurity Kondo-like resistivity component of UAsSe ferromagnets

Cited by 30 publications

References 28 publications

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Electrical transport properties of USbSe and USbTe

A low-temperature electron diffraction study of structural disorder and its relationship to the Kondo effect in ThAsSe

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