On the oxidation of silicon

Mott, N. F.

doi:10.1080/13642818708211199

Cited by 91 publications

(34 citation statements)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The polarization is established by the free movement of metal ions in the gap. This motion of metal ions is "liquid-like" in the sense of Mott's idea; 18 however, in the present model, it is only the metal ions in the gap which behave in this way, and not both metal and oxygen ions as Mott suggested.…”

Section: Mathematical Modelmentioning

confidence: 61%

“…Mott proposed that local excitations may be possible in amorphous oxide films involving on the order of 10 ions, in which, for a time on the order of 1 ps, the ions vibrate with a liquid-like amplitude about their positions. 18 During this brief time, liquid-type transport is possible within this "liquid-like cluster," causing both metal or oxygen ions to migrate S0013-4651(98)09-078-8 CCC: $7.00 © The Electrochemical Society, Inc.…”

mentioning

confidence: 99%

“…16 A number of authors have discussed transport in these films in terms of such cooperative mechanisms. 2,15,[17][18][19] Cooperative transport is thought to arise from the amorphous structure of the anodic films, since in crystalline films, metal and oxygen transport numbers are not of comparable magnitude.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Metal and Oxygen Ion Transport during Ionic Conduction in Amorphous Anodic Oxide Films

Wang

Hebert

1999

J. Electrochem. Soc.

View full text Add to dashboard Cite

A mathematical model was developed for ionic conduction in amorphous oxide films. The model is based on a hypothesized "defect cluster" mechanism in which both metal and oxygen ions are involved in transport. Defect clusters are created by inward displacement of oxygen ions around an oxygen vacancy-like defect in response to the vacancy's electric field. Metal ions are assumed to migrate easily in the gap between the first and second layer of oxygen ions around the vacancy. The model includes the polarization of the conductive gap in the applied electric field, the exchange of mobile metal ions in the cluster with stationary metal ions in the surrounding oxide, and space charge generated in the film by clusters and oxide nonstoichiometry. The rate-limiting step is the jump of the oxygen vacancy in the cluster. It was found that polarization of the cluster leads to a stoichiometric excess of metal ions in the cluster and that this excess produces a net transport of metal ions due to the motion of the cluster. The metal ion transport number was found to increase with electric field and to depend on the dielectric constant and cluster size. The field dependence follows that found experimentally. The calculated transport numbers are in quantitative agreement with experimental values for tantalum, niobium, and tungsten oxide but smaller than experimental values for aluminum oxide. The field coefficient in the high-field-conduction-rate expression is also predicted and agrees with experimental values to within 10%.

show abstract

Section: Mathematical Modelmentioning

confidence: 61%

mentioning

confidence: 99%

See 1 more Smart Citation

Metal and Oxygen Ion Transport during Ionic Conduction in Amorphous Anodic Oxide Films

Wang

Hebert

1999

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…It is noted that, even in the absence of viscous flow and with a large mismatch between the amorphous oxide film and its metal substrate, the strain in the amorphous oxide film ͑at the growth temperature͒ may be small. 24 …”

Section: ͑6͒mentioning

confidence: 99%

Thermodynamic stability of amorphous oxide films on metals: Application to aluminum oxide films on aluminum substrates

et al. 2000

View full text Add to dashboard Cite

It has been shown on a thermodynamic basis that an amorphous structure for an oxide film on its metal substrate can be more stable than the crystalline structure. The thermodynamic stability of a thin amorphous metal-oxide film on top of its single-crystal metal substrate has been modeled as a function of growth temperature, oxide-film thickness, and crystallographic orientation of the metal substrate. To this end, expressions have been derived for the estimation of the energies of the metal-substrate amorphous-oxide film interface and the metal-substrate crystalline-oxide film interface as a function of growth temperature, and crystallographic orientation of the substrate ͑including the effect of strain due to the lattice mismatch͒. It follows that, up to a certain critical thickness of the amorphous oxide film, the higher bulk Gibbs free energy of the amorphous oxide film, as compared to the corresponding crystalline oxide film, can be compensated for by the lower sum of the surface and interfacial energies. The predicted occurrence of an amorphous aluminum-oxide film on various crystallographic faces of aluminum agrees well with previous transmission electron microscopy observations.

show abstract

“…Amorphous anodic oxides, usually formed on aluminum, niobium, tantalum and tungsten, grow simultaneously both at the metal/film and film/electrolyte interfaces by counter migrations of anion inwards and cations outwards in a cooperative manner under the high electric field [1,2]. A "liquid droplet" model has been proposed to explain the complex ionic transport in growing anodic oxide films [3], although the quantitative model is still awaited for further precise understanding of the growth process. In contrast, crystalline anodic oxides, formed on zirconium and hafnium, are developed predominantly at the metal/film interface by migration of O 2− ions inwards, with little contribution of cation migration.…”

Section: Introductionmentioning

confidence: 99%

Formation and dielectric properties of anodic oxide films on Zr–Al alloys

Koyama

Aoki

Nagata

et al. 2010

J Solid State Electrochem

View full text Add to dashboard Cite

Zr-Al alloys containing up to 26 at.% aluminum, prepared by magnetron sputtering, have been anodized in 0.1 mol dm -3 ammonium pentaborate electrolyte, and the structure and dielectric properties of the resultant anodic oxide films have been examined by grazing incidence X-ray diffraction, transmission electron microscopy, Rutherford backscattering spectroscopy and AC impedance spectroscopy. The anodic oxide film formed on zirconium consists of monoclinic and tetragonal ZrO 2 with the former being a major phase. Two-layered anodic oxide films, comprising an outer thin amorphous layer and an inner main layer of crystalline tetragonal ZrO 2 phase, are formed on the Zr-Al alloys containing 5 to 16 at.% aluminum. Further increase in the aluminum content to 26 at.% results in the formation of amorphous oxide layer throughout the thickness. The anodic oxide films becomes thin with increasing aluminum content, while the relative permittivity of anodic oxide shows a maximum at the aluminum content of 11 at.%. Due to major contribution of permittivity enhancement, the maximum capacitance of the anodic oxide films is obtained on the Zr-11 at.% Al alloy, being 1.7 times than on zirconium at the formation voltage of 100 V.

show abstract

On the oxidation of silicon

Cited by 91 publications

References 54 publications

Metal and Oxygen Ion Transport during Ionic Conduction in Amorphous Anodic Oxide Films

Metal and Oxygen Ion Transport during Ionic Conduction in Amorphous Anodic Oxide Films

Thermodynamic stability of amorphous oxide films on metals: Application to aluminum oxide films on aluminum substrates

Formation and dielectric properties of anodic oxide films on Zr–Al alloys

Contact Info

Product

Resources

About