On the ?-Particle Irradiation Effects in MESFETs

Abstract

a-particle irradiation investigations have been carried out on various structure GaAs metal±semiconductor field-effect transistors. The device characteristics were measured before irradiation and after a-particle irradiation with fluences ranging from 5 Â 10 10 to 3 Â 10 12 cm ± ±2 . The carrier removal rate was found to be independent of the doping level as determined from Schottky diodes and device parameters. Five traps were found to be introduced by irradiation. Two of them were found to determine the temperature dependence of drain current. The threshold voltage shift was modeled taking into account the degradation of the channel carrier removal, the gate barrier height and the channel±substrate space charge region width.

Ion irradiation induced nitrogen mobility in a GaInNAs quantum well laser

“…The radiation has been performed with the aid of an americum 241 source, with a 5 MeV alpha particles. In this experiment the irradiation was set for 2 h. The fluence was 10 11 cm −2 so that, according to previous experiments in GaAs epitaxial layers [20], the carrier removal was of the order of 4 × 10 14 cm −3 . Using the TRIM code [21], the calculated densities of the As vacancies and the In recoiled atoms in the QW were found not to exceed values of 3 × 10 15 cm −3 and 10 15 cm −3 , respectively, as shown in figure 1.…”

Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors

“…Past work has reported the effect of neutrons, electrons, cosmic rays, and gamma rays on the device characteristics of GaAs MESFETs. [5][6][7][8][9][10][11][12][13][14] Much less is known about the effects of high energy proton irradiation of the type encountered in satellites employed for broad-band transmission or weather forecasting.…”