On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds

Yuan, Jiahui; Cressler, John D.; Krithivasan, R.; Thrivikraman, Tushar; Khater, Marwan; Ahlgren, D.; Joseph, A.J.; Rieh, Jae-Sung

doi:10.1109/ted.2009.2016017

Cited by 47 publications

(17 citation statements)

References 56 publications

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“…Other examples of SiGe circuits operating over 100 GHz exist in the literature [95], [96]. SiGe transistors are known to have high cutoff frequencies with cryogenic cooling, and one interesting paper reported measuring a SiGe HBT with 615 GHz obtained at 4.5 K [97]. It is projected that with proper device scaling, room temperature SiGe HBT cutoff frequencies could approach 1 THz [97].…”

Section: Emerging Technologiesmentioning

confidence: 99%

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

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Abstract-We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years. Highlights include the best reported data from heterojunction bipolar transistor (HBT) circuits, high electron mobility transistor (HEMT) circuits, and metamorphic HEMT (mHEMT) amplifier circuits. We discuss packaging techniques for the various technologies in waveguide modules and describe the best reported noise figures measured in these technologies. A consequence of THz transistors, namely ultra-low-noise at cryogenic temperatures, will be explored and results presented. We also present a short review of power amplifier technologies for the THz regime. Finally, we discuss emerging materials for THz amplifiers into the next decade.

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Section: Emerging Technologiesmentioning

confidence: 99%

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

236

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“…It is well known that SiGe HBTs have excellent cryogenic properties, and aggressive scaling further accentuates their desirable properties at deep cryogenic temperatures. [23][24][25][26] At low values of power dissipation, SiGe HBTs still have useful gain, low-noise, and good frequency response, [27][28][29] suggesting that the physical properties of SiGe HBTs should be further investigated and understood at mK temperatures. In the absence of thermally-generated carriers at mK temperatures, the classical drift-diffusion picture of charge transport in the transistor becomes inapplicable, and there remains a fundamental question of how such transistors can amplify in the quantum regime.…”

mentioning

confidence: 99%

Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

et al. 2017

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Quantum transport measurements in advanced Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are presented and analyzed, including tunneling spectroscopy of discrete impurity levels localized within the transistor and the dependence on an applied magnetic field. The collector current at mK temperatures is well accounted for by ideal electron tunneling throughout the entire base. The amplification principle at mK temperatures is fundamentally quantum mechanical in nature: an increase in base voltage, requiring a moderate base current, creates an equal and opposite decrease in the tunneling barrier seen by the electrons in the emitter, thereby increasing the collector current significantly more than the base current, producing current gain.Highly-scaled SiGe HBTs operate predictably at mK temperatures, thus opening the possibility of viable SiGe mK circuitry.

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“…Also, the ref. [6] has Journal of Applied Mathematics and Physics been proved that reducing the width of the emitter can greatly improve the frequency of SiGe HBT. In addition, the band structure of silicon can be changed by introducing global strain or local strain to improve carrier mobility has been reported [7] [8].…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering

Miao¹,

Li²,

Wen³

et al. 2020

JAMP

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In order to improve the electrical and frequency characteristics of SiGe heterojunction bipolar transistors (HBTs), a novel structure of SOI SiGe heterojunction bipolar transistor is designed in this work. Compared with traditional SOI SiGe HBT, the proposed device structure has smaller window widths of emitter and collector areas. Under the act of additional uniaxial stress induced by Si 0.85 Ge 0.15 , all the collector region, base region and emitter region are strained, which is beneficial to improve the performance of SiGe HBTs. Employing the SILVACO  TCAD tools, the numerical simulation results show that the maximum current gain β max , the Earley voltage V A are achieved for 1062 and 186 V, respectively, the product of β and V A , i.e., β × V A , is 1.975 × 10 5 V and, the peak cutoff frequency f T is 419 GHz when the Ge component in the base has configured to be a trapezoidal distribution. The proposed SOI SiGe HBT architecture has a 52.9% improvement in cutoff frequency f T compared to the conventional SOI SiGe HBTs.

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On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds

Cited by 47 publications

References 56 publications

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering

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