On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors<sup>*</sup>

Knoch, J.; Richstein, B.; Han, Y.; Jungemann, C.; Icking, E.; Schreiber, L.R.; Xue, R.; Tu, J.-S.; Gökcel, T.; Neugebauer, J.; Stampfer, C.; Zhao, Q.T.

doi:10.1109/nmdc57951.2023.10343713

2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) 2023

DOI: 10.1109/nmdc57951.2023.10343713

|View full text |Cite

On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors^*

J. Knoch,

B. Richstein,

Y. Han

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Icking,

Emmerich,

Watanabe

et al. 2024

Nano Lett.

View full text Add to dashboard Cite

Cryogenic field-effect transistors (FETs) offer great potential for applications, the most notable example being classical control electronics for quantum information processors. For the latter, on-chip FETs with low power consumption are crucial. This requires operating voltages in the millivolt range, which are only achievable in devices with ultrasteep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 μV/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van der Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature.

show abstract

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Icking,

Emmerich,

Watanabe

et al. 2024

Nano Lett.

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors^*

Cited by 1 publication

References 19 publications

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Contact Info

Product

Resources

About

On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors*

Cited by 1 publication

References 19 publications

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene

Contact Info

Product

Resources

About

On the Performance of Low Power Cryogenic Electronics for Scalable Quantum Information Processors^*