On the Photo‐Carriers Dynamic Regulation by Piezo‐Phototronic Effect in Metal‐Oxide–Semiconductor Tunneling Junction

Abstract

eration, separation, recombination, and transportation of charge carriers at the interface or junction through the piezoelectric potential. [1] The novel optoelectronic devices with high performance can be realized though the piezo-phototronic effect. The piezo-phototronic effect utilize the piezo-charges and piezo-potential generated at the interface to tune the height of the barrier, and exponentially control the photogenerated carriers transport at metal-semiconductor, anisotype and isotype heterojunction photodiode. [2,3] Piezo-phototronic devices have attracted much research interest because they can directly convert mechanical signals into electrical signals. This unique energy conversion method has been used in solar cells, [4][5][6] light-emitting diodes, [7][8][9] touchscreen electronics, [10,11] light detection and imaging, [12,13] high electron mobility transistors, [14] and so on.In recent years, research on piezophototronic effect has made great progress. Generally speaking, the current research is focused on two directions. On the one hand, 1D and 2D materials with different piezoelectric coefficients are used in conventional device structures such as metal-semiconductor, [15][16][17][18][19] homogeneous p-n junction, and heterogeneous p-n junction. [20][21][22] On the other hand, different device structures are investigated to enhance the efficiency of piezoelectric polarization charges,