On the photoemission bands due to colour centres in the 310-750 nm region and the effective escape depth of the photoemitted electrons in CsCl

Soler, A.; Galán, L.; Rueda-Sanchez, F

doi:10.1088/0022-3719/7/4/017

J. Phys. C: Solid State Phys.

1974

DOI: 10.1088/0022-3719/7/4/017

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On the photoemission bands due to colour centres in the 310-750 nm region and the effective escape depth of the photoemitted electrons in CsCl

A. Soler¹,

L. Galán²,

F Rueda-Sanchez

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1979

1981

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Cited by 3 publications

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Effect of reanodization on exoelectron emission of anodic Ta2O5 films

Nanto

Kawanishi

1979

Phys. Stat. Sol. (a)

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The effect of reanodization on the thermally stimulated exoelectron emission (TSEE) from anodic Ta2O5 films is investigated. The thickness dependence of TSEE indicates that oxygen vacancies induced by heat treatment in the oxide film play the role of the emission‐active centres. It is confirmed by the reanodization technique that the distributions of oxygen vacancies are expressed by two exponentials. The mean attenuation length of exoelectrons (L) and the attenuation constants of oxygen vacancy distributions (μi and μs) are estimated experimentally.

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Effect of reanodization on exoelectron emission of anodic Ta2O5 films

Nanto

Kawanishi

1979

Phys. Stat. Sol. (a)

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Surface contamination and escape depth of photoelectrons from color centers in RbCI

Galán

Soler

Sanchez

et al. 1980

Phys. Stat. Sol. (a)

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The photoemission of F-centers in RbCl is st,udied after electron bombardment up to 20 kV. When illuminating with L-band and F-band light, photoemission is produced in the first case only, indicating the emission of hot electrons. The dependence of the overall photoemission efficiency as a function of the energy of bombarding electrons is determined and justified with a simple model.On a Btudie la photoemission des centres F e n RbCl apres un bombardement avec des 616ctrons de 20 kV. Quand on illumine avec lumiere de la bande L a t de la bande F on ne produit photobmission que dans le premier cas, ce qui indique une &mission par des "616ctrons chauds" (hot electrons). On determine l'efficacit.6 globale de photoemission en fonction de 1'6nergie des blbctrons de bombardement, ce qui est aussi expliqu6 par une modele simple.

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Electronic structure of point defectson insulator surfaces

Bermudez

1981

Progress in Surface Science

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On the photoemission bands due to colour centres in the 310-750 nm region and the effective escape depth of the photoemitted electrons in CsCl

Cited by 3 publications

References 18 publications

Effect of reanodization on exoelectron emission of anodic Ta2O5 films

Effect of reanodization on exoelectron emission of anodic Ta2O5 films

Surface contamination and escape depth of photoelectrons from color centers in RbCI

Electronic structure of point defectson insulator surfaces

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