On the Piezoelectric Signals of Multilayer Systems

Wen, Td D.; Xu, Lp P.; Anastassakis, E.

doi:10.1002/(sici)1521-396x(200002)177:2<467::aid-pssa467>3.0.co;2-7

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…where A is a constant [8]. The build-in electric field E can change either a step function or as a continuous function along the growth direction, depending on whether we have a step-super-lattices or a continuous-super-lattices.…”

Section: ． Built-in Electric Fieldmentioning

confidence: 99%

The Meso- Piezo-Resistive Effects in MEMS/NEMS

Wen

Xiong

et al. 2007

SSP

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Meso- piezoresistive effect is proposed, which is defined as “Strain Tuning of the resonant current”, in order to convert a weak mechanical signal into a strong tunneling current signal. If a mechanical signal is acted on an related mechanical nano-structure, the corresponding strain distribution will be produced in the structure; the built- in electric field will be resulted from the strain in system in some conditions; the strain and built-in electric filed will result in the change of electronic energy states; the change of electronic energy state will influence on the value of the tunneling current. Two experimental units are designed, one being used to detect an acoustic signal under sea, other to detect acceleration.

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Section: ． Built-in Electric Fieldmentioning

confidence: 99%

The Meso- Piezo-Resistive Effects in MEMS/NEMS

Wen

Xiong

et al. 2007

SSP

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“…The methods of transfer matrix have been used widely to deal with the transfer process of general waves also, such as ultrasonic and electromagnetic waves, etc. [7,8,9]. Meso-piezoresistive effect is proposed, in order to extend the function of devices based on general piezoresistive effect, that is defined as "Strain Tuning of Resonant Tunneling Current".…”

Section: Introductionmentioning

confidence: 99%

The Resonant Tunneling in Si<sub>1-x</sub>Ge<sub>x</sub>/Si Superlattices

Wen

Yang

et al. 2007

SSP

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It has been studied that the dependence of tunneling coefficient T on the ratio x of Ge, on the barrier width B L , on the well width W L and on the periodicity N in periodic superlattices Si1-xGex/Si by the method of transfer matrix, and shown in figures. The dependence of peak region width W on the above parameters are discussed in detail, and plotted, those are fitted in functions. These results may be useful to convert a weak mechanical signal into a strong tunneling current signal and to design electron devices based on meso- piezoresistive effect in the superlattices Si1-xGex/Si.

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Analytical and numerical modeling of resonant piezoelectric devices in China-A review

Yang

2008

Sci. China Ser. G-Phys. Mech. Astron.

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The results on theoretical and numerical modeling of resonant piezoelectric devices in China are reviewed. Solutions to dynamic problems of the propagation of bulk acoustic waves (BAW), surface acoustic waves (SAW), vibrations of finite bodies, and analyses of specific devices are discussed. Results from both the ultrasonics community and mechanics researchers are included. It is hoped that the paper will be useful for the understanding, communication and collaboration between Chinese and foreign scholars. The paper may also be helpful for bridging the gap between ultrasonics and mechanics researchers on piezoelectricity research. The paper contains 316 references.

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On the Piezoelectric Signals of Multilayer Systems

Cited by 5 publications

References 7 publications

The Meso- Piezo-Resistive Effects in MEMS/NEMS

The Meso- Piezo-Resistive Effects in MEMS/NEMS

The Resonant Tunneling in Si<sub>1-x</sub>Ge<sub>x</sub>/Si Superlattices

Analytical and numerical modeling of resonant piezoelectric devices in China-A review

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