On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses

Abstract

Abstract.We have investigated the influence of high-energy γ-irradiation on the optical transmission spectra of ternary Ge-As-S chalcogenide glasses of the stoichiometric As 2 S 3 -GeS 2 and non-stoichiometric As 2 S 3 -Ge 2 S 3 systems. A long-wave shift of the fundamental absorption edge is observed for all glasses. Two different components of radiation-induced changes were specified: static (residual) and dynamic (time dependent) ones. The dynamic component is mathematically described by the exponential and power functions in respect to post-irradiation periods. It is shown that quantitative features of the observed self-restoration phenomena in the irradiated glasses are closely related to their chemical compositions and stoichiometry.

γ-ray irradiation induced multiple effects on Ge–As–Se chalcogenide glasses

“…The question now arises as to why G3 with the highest content of As 2 Se 3 showed the lowest DE opt /E opt among other three (Table 1). Similar phenomena were observed by Butkiewicz [7] and Shpotyuk X (at%) Fig. 3.…”

“…Although a series of sulfide glass systems, such as As-S [5], As-Se-Sb [6] and Ge-As-S [7], have been studied in this respect, the systematic investigations of c-irradiation induced effects on selenium-based chalcogenide glasses is lacking. Previous works have demonstrated that many selenide glass systems possess advantages of higher thermal stability, easier preparation and excellent IR transmittance [8,9].…”

Gamma‐Ray‐Induced Multi‐Effect on Properties of Chalcogenide Glasses

“…Additional deficiencies of these materials are the necessity of high‐temperature annealing (800–1000 K) in order to restore their initial optical properties. Recently, bulk chalcogenide glasses have been considered to be a good alternative candidate for use as a high‐energy irradiation detector in dosimetry systems for wide industrial applications due to the fact that their high‐energy irradiation properties have a highly correlated relationship with the absorbed doses 2–6 . These glass irradiation detectors allow a low regeneration temperature (<350°C) for reuse in comparison with currently used ones that are colored oxide glasses (>500°C).…”

Irradiation Induced Changes in Semiconducting Thin Films

“…The initial state has been achieved following thermo-annealing near the T g . Optical transmission spectra were recorded for the ternary Ge-As-S chalcogenide glasses of stoichiometric As 2 S 3 -GeS 2 and nonstoichiometric As 2 S 3 -Ge 2 S 3 systems [20] after the γ-irradiation (C 60 source; dose 106 Gy; average energy 1.25 MeV).…”