On the properties of indium doped ZnO thin films

Kumar, Pravin; Kartha, C. Sudha; Vijayakumar, K. P.; Abe, Takashi; Kashiwaba, Y.; Singh, Fouran; Avasthi, D.K.

doi:10.1088/0268-1242/20/2/003

Cited by 151 publications

(64 citation statements)

References 35 publications

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“…It can be seen that the grain size of the films decreases by increasing indium incorporation. This behavior of the www.pss-c.com grain size increasing the doping level is in agreement with those reported for ZnO thin films prepared by the same process [7,9]. This effect can be explained if it is considered that (i) indium atoms do not substitute zinc ions, instead they occupy interstitial sites resulting in a large number of dislocations and (ii) probable formation of compound which is growing along with ZnO:In.…”

supporting

confidence: 88%

“…Indium incorporation in to the compounds caused reorientation which exhibited itself as (101) preferred orientation, whereas (002) peak intensities observed to be decreased. The crystal structure of the obtained films is better than those reported for the films deposited at 400 and 450 o C substrate temperatures by the same method [7,8]. Because, the properties of the film depend on the experimental parameters such as spray solution molarity, spray rate, substrate temperature, carrier gas and droplet size.…”

mentioning

confidence: 67%

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Electrical and optical properties of undoped and In‐doped ZnO thin films

Çağlar

Ilıcan

2007

Phys. Status Solidi (c)

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. Hk, 68.55.Jk, 72.80.Ey Transparent conducting undoped and indium-doped zinc oxide (ZnO) thin films have been deposited by the spray pyrolysis method at 350 °C substrate temperature. X-ray diffraction spectra of the films have shown that the films are polycrystalline and hexagonal wurtzite in structure. The average optical transmittance of 1% indium-doped ZnO thin films was over 84% in the visible range. The direct band gap value of the undoped ZnO film was calculated. Electrical conductivity measurement of Ag-ZnO:In-Ag structures have been carried out using the two-probe method in dark, in the range of temperature from 90 to 320 K. The conductivity of undoped and indium-doped ZnO films increases with increase in temperature. The incorporation of indium in the ZnO film enhanced the conductivity. The conductivity of 1 at.% In-doped film is higher than undoped ZnO at room temperature. The activation energies E a values in the range of 90-320 K temperatures were also determined. -3]. Among the TCO materials available, zinc oxide films doped with appropriate impurities, usually the group-III elements such as B, Al, Ga and In, present, due to their good electrical and optical properties, an attractive alternative for indium tin oxide (ITO), because they are nontoxic and less expensive. An outstanding characteristic of ZnO thin film is that its electrical properties can be changed from insulator through n-type semiconductor to metal by controlling the doping level. These properties of ZnO which is a II-VI compound have received considerable attention, and various n-ZnO based single heterojunction devices have been fabricated using different p-type materials [4]. There are several methods for producing ZnO films: chemical vapor deposition, ionized cluster-beam deposition, pulsed-laser deposition, dc sputtering, magnetron sputtering and spray pyrolysis [5,6]. Of these, the spray pyrolysis method has increased interest in the preparation of thin films in last years due to some advantages in comparison to the other methods. It is simple, non-expensive method initially developed for conductive oxide deposition on solar cells applications and flexible for process modifications that allows large area deposition. Zinc oxide, a direct bandgap (E g = 3.3 eV at 300 K) semiconductor with large exciton binding energy of 60 meV is a promising material for fabrication of high efficiency ultraviolet light-emitting devices [4].

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supporting

confidence: 88%

mentioning

confidence: 67%

Electrical and optical properties of undoped and In‐doped ZnO thin films

Çağlar

Ilıcan

2007

Phys. Status Solidi (c)

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“…The CaF 2 capping layer did not prevent the degradation of the film but delayed it by up to two weeks. The interference fringe pattern in the transmission spectrum indicates that the film surface was highly reflecting and there was not much scattering or absorption loss in the film [9].…”

Section: Resultsmentioning

confidence: 99%

“…Figure We have previously reported that doping of CuCl by co-evaporation with ZnCl 2 results in the quenching of the excitonic emission one day after deposition measured by UV-VIS spectroscopy and is accompanied by a decrease in the transmittance of the Zn-doped films [6]. For optoelectronic device applications both the electrical conductivity and the optical transmission should be as high as possible [9]. Therefore it is important to ensure that the transmissivity is not compromised by doping.…”

Section: Resultsmentioning

confidence: 99%

Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications

O'Reilly

Mitra

Lucas

et al. 2007

J Mater Sci: Mater Electron

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The use of co-evaporation of ZnCl 2 with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current-voltage (IV) characteristics in the range of ±4V have been measured using Cu-Au electrical contacts. Room temperature Hall effect measurements show some evidence of a mixed conduction mechanism. On average the samples exhibit n-type conductivity with a bulk electron carrier concentration n ~ 1 x 10 16 cm -3 and Hall mobility µ ~ 29 cm 2 v -1 s -1 for a CuCl sample doped with a nominal 3 mole % ZnCl 2 . By use of an in situ CaF 2 capping layer, transmission > 90% is achieved. At room temperature a strong Z 3 free excitonic emission occurs at ~385 nm using both photoluminescence and x-ray excited optical luminescence, indicating the high optical quality of the doped material.

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“…More massive Group III elements, such as indium [21], [22], gallium [23], aluminum (Al) [24], and boron (B), are known n-type dopants in ZnO [25]. They have been incorporated in ZnO mostly to form transparent-conducting electrodes for solar cells [26] or lightemitting diodes [26], [27].…”

Section: Introductionmentioning

confidence: 99%

Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability

Yang

Lü

Wong

2012

IEEE Trans. Electron Devices

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Abstract-Because of the rapid diffusion of hydrogen in zinc oxide even at a relatively low temperature, zinc-oxide-based thinfilm transistors (TFTs) with hydrogen-doped source/drain regions suffer from degraded thermal stability. The use of boron, which is a heavier and a more slowly diffusing dopant, is systematically investigated as a replacement of hydrogen. Its effectiveness as a dopant has been studied in terms of a range of process conditions, including its implantation dosage and the subsequent heat treatment temperature, time, and ambience. The lowest resistivity of 2 mΩ-cm has been obtained at a boron dose of 10 16 /cm 2 . Self-aligned top-gated zinc-oxide TFTs with source/drain regions doped with implanted boron are shown to be more stable than those doped with hydrogen, even when subjected to the relatively high temperature needed for the formation of a good-quality passivation layer.

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On the properties of indium doped ZnO thin films

Cited by 151 publications

References 35 publications

Electrical and optical properties of undoped and In‐doped ZnO thin films

Electrical and optical properties of undoped and In‐doped ZnO thin films

Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications

Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability

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