ABSTRACT:To investigate the effects of substituents attached to the silicon atom on the thermal rearrangement reactions of ␣-silyl alcohols, the thermal rearrangement reactions of dimethylsilyl methanol (CH 3 ) 2 SiHCH 2 OH and vinylsilyl methanol CH 2 ACHSiH 2 CH 2 OH were studied by ab initio calculations at the G3 level. Geometries of various stationary points were fully optimized at the MP2(full)/6-31G(d) and MP2(full)/6-311G(d,p) levels, and harmonic vibrational frequencies were calculated at the same levels. The reaction paths were investigated and confirmed by intrinsic reaction coordinate (IRC) calculations at the MP2(full)/6-31G(d) level. The results show that two dyotropic reactions could occur when (CH 3 ) 2 SiHCH 2 OH or CH 2 ACHSiH 2 CH 2 OH is heated. One is Brook rearrangement reaction (reaction A), and the dimethylsilyl or vinylsilyl groups migrates from carbon atom to oxygen atom coupled with a simultaneous migration of a hydrogen atom from oxygen atom to carbon atom passing through a double three-membered ring transition state, forming dimethylmethoxylsilane (CH 3 ) 2 SiHOCH 3 or methoxylvinylsilane CH 2 ACHSiH 2 OCH 3 ; the other is a hydroxyl group migration (reaction B) from carbon atom to silicon atom, coupled with a simultaneous migration of a hydrogen atom from silicon atom to carbon atom, via a double three-membered ring transition state, forming trimethylsilanol (CH 3 ) 3 SiOH or methylvinylsilanol CH 3 SiH(OH)CHACH 2 . The G3 barriers of the reactions A and B were computed to be 312.8 and 241.4 kJ/mol for (CH 3 ) 2 SiHCH 2 OH, and 317.6 and 233.7 kJ/mol for CH 2 ACHSiH 2 CH 2 OH, respectively. On the basis of the MP2(full)/6-31G(d) optimized parameters, vibrational frequencies, and G3 energies, the reaction rate constants k(T) and equilibrium constants K(T) were calculated using canonical variational transition state theory (CVT) with centrifugal-dominant smallcurvature tunneling (SCT) approximation over a temperature range of 400 -1800 K. The influences of methyl and vinyl groups attached to the silicon atom on reactions are discussed.