On the Realization of Self-Sensing Piezoelectric MEMS Actuators

Tiwari, Sudhanshu; Kumar, Rajesh; Menon, P. Krishna; Antony, Jeyaseelan A; Dutta, Soma; Pratap, Rudra

doi:10.1109/marss.2019.8860944

Cited by 8 publications

(2 citation statements)

References 14 publications

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“…All the devices were fabricated on an SOI wafer with a 25 µm device layer thickness. Experimental results from some devices shown in figures 6(a), (c), (d) and 12(b) can be found in other reports [29][30][31][32].…”

Section: Vibration Characterisationsupporting

confidence: 52%

Low cost, contamination-free, and damage-free fabrication of PZT MEMS on SOI substrate

Tiwari¹,

Kumar²,

Dangi³

et al. 2021

J. Micromech. Microeng.

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This paper reports a generalised process flow for the fabrication of Lead Zirconate Titanate based Piezoelectric Micro Electromechanical System devices. The optimised process can be used to realise several devices with different 1-D and 2-D geometries on a single wafer. All the state-of-the-art fabrication methods introduce some damage to the active piezoelectric material. This damage entails the need for an additional step of recovery anneal in the fabrication process. Our process was designed and optimised to avoid any such damage to the PZT layer. Remnant polarisation and effective transverse piezoelectric coefficient (e31,f) were used as metrics to quantify the damage to the PZT layer. It is shown that our process does not damage the PZT thin film during the fabrication, and hence no recovery anneal is required. We observe a ~3x improvement in remnant polarisation and ~2x improvement in e31,f of PZT thin film compared to the PZT thin film subjected to our previous fabrication process. Moreover, the process explained here uses only wet chemical methods for patterning of contaminating agents (PZT and platinum), making it a cost-effective process.

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Section: Vibration Characterisationsupporting

confidence: 52%

Low cost, contamination-free, and damage-free fabrication of PZT MEMS on SOI substrate

Tiwari¹,

Kumar²,

Dangi³

et al. 2021

J. Micromech. Microeng.

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“…In the present work, we report a giant LPV in a SiC/Si heterojunction utilizing a free-standing SiC serpentine beam. By alternating the structure of the SiC layer and releasing the SiC beam from the Si, an LPV of 191 mV can be generated under illumination from a 637 nm laser (5000 μW), which can be utilized for a number of microelectromechanical systems (MEMS) devices. , Even under weak illumination of 1 μW, we observed a distinct photoresponse with an output voltage of 7.21 mV. We conducted experiments at different light powers (from 1 μW to 5000 μW) and wavelengths (405, 521, and 637 nm) to investigate the dependence of the LPV on various light conditions.…”

Section: Introductionmentioning

confidence: 98%

Giant Lateral Photovoltage in a SiC/Si Heterojunction with a Micro Free-Standing SiC Serpentine Beam

Nguyen

Pham

et al. 2022

ACS Appl. Energy Mater.

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The lateral photovoltaic effect (LPE) is being explored as a promising method for energy harvesting and self-powered sensing. Herein we propose a free-standing SiC serpentine micro beam structure that is capable of generating a giant lateral photovoltage (LPV) of 191 mV under illumination from a 637 nm laser. We observed a photoresponse from the SiC beam even under a relatively weak illumination of 1 μW. The unique design of the free-standing SiC micro beam hinders the diffusion of photogenerated charge carriers, resulting in a high charge carrier concentration gradient, capable of generating a giant LPV. Our findings in this work demonstrate the potential for the development of miniaturized energy generators and self-powered sensors from the SiC/Si heterojunction.

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Significant Enhancement in Operational Bandwidth of ZnO PMUTs due to the Simultaneous Existence of Softening and Hardening Nonlinearity

Kumar

Tiwari

Pratap

2020

2020 IEEE International Ultrasonics Symposium (IUS)

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On the Realization of Self-Sensing Piezoelectric MEMS Actuators

Cited by 8 publications

References 14 publications

Low cost, contamination-free, and damage-free fabrication of PZT MEMS on SOI substrate

Low cost, contamination-free, and damage-free fabrication of PZT MEMS on SOI substrate

Giant Lateral Photovoltage in a SiC/Si Heterojunction with a Micro Free-Standing SiC Serpentine Beam

Significant Enhancement in Operational Bandwidth of ZnO PMUTs due to the Simultaneous Existence of Softening and Hardening Nonlinearity

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