On the recombination of intrinsic point defects in dislocation-free silicon single crystals

A Selective Review of the Simulation of the Defect Structure of Dislocation-Free Silicon Single Crystals

“…This assumption was confirmed in several experimental works [7,15]. In paper [44] we first theoretically proved the absence of recombination of intrinsic point defects at high temperatures and fast recombination at low temperatures.…”

“…However, the model of point defect dynamics has not been used for calculating the formation of interstitial dislocation loops and microvoids under the assumption that the recombination of intrinsic point defects is absent in the vicinity of the crystallization front. This fact is evidenced by experimental and theoretical investigations [14,44].…”

“…The formation of complexes between the intrinsic point defects and impurities is governed, on the one hand, by the fact that both the intrinsic point defects and the impurities are sources of internal stresses in the lattice (elastic interaction) and, on the other hand, by the Coulomb interaction between them (provided the defects and the impurities are present in the charged state). The mathematical model under consideration allows for the elastic interaction and the absence of the recombination of intrinsic point defects in the high-temperature range [44]. The concentrations of intrinsic point defects C i,v r, t ( ) in the growing crystal satisfy the diffusion equation…”

“…This physical model on the experimentally and theoretically established fact the absence of recombination of intrinsic point defects near the crystallization front of the crystal is based [44]. It is assumed that due to of the elastic interaction between the intrinsic point defects and the residual impurities the vacancies and intrinsic interstitial silicon atoms are drains on impurities of oxygen and carbon accordingly [14].…”

“…Approximate estimation at a temperature T = T m leads to the free energy of the recombination barrier G(1683K ) = 2.014eV [44].…”