On the relationship between photoconductivity and light intensity in solids

Schellenberg, J J; Kao, K. C.

doi:10.1088/0022-3727/21/12/017

Cited by 6 publications

(4 citation statements)

References 16 publications

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“…Figure is also indicative of the fact that sensitivity is dependent on the illumination intensity. In fact, it is functionally given as

\begin{matrix} right S & center \propto & left I^{γ}, \end{matrix}

where I represents the illumination intensity. The exponential factor

γ

can be evaluated from the slope of the straight line obtained when Fig.…”

Section: Resultsmentioning

confidence: 99%

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Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent

Gupta

Arun

2015

Physica Status Solidi (b)

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Tin Sulphide is a layered compound which retains its structure when deposited as thin films by thermal evaporation. The films were found to have oriented growth with the direction of orientation changing with film thickness. The film's morphology was found to change with orientation. The poor conductivity of the thicker samples made it difficult to make photocunductivity characterisation. However, unlike reported the thinner samples showed photo-sensitivity to be independent of film thickness and grain size with a high presistent photocurrent. With their absorption, photosensitivty, optimum band-gap and traps within the bandgap giving the charge carriers a longer life-time, thin samples of tin sulphide gives adequate scope designing efficient photovoltaics. The refractive index was modeled using Sellmeir's model, while most of the previous studies talk of Wemple-DiDomenico single oscillator model or Cauchy's dispersion relation. The Sellmeir's fitting parameters are reported which can be of use in ellipsometric studies.

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“…Figure is also indicative of the fact that sensitivity is dependent on the illumination intensity. In fact, it is functionally given as

\begin{matrix} right S & center \propto & left I^{γ}, \end{matrix}

where I represents the illumination intensity. The exponential factor

γ

can be evaluated from the slope of the straight line obtained when Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The above equation reduces to ∆σ = q(∆p)µ Fig 6 is also indicative of the fact that sensitivity is dependent on the illumination intensity. In fact it is functionally given as [41,22]…”

Section: Photoconductivitymentioning

confidence: 99%

Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent

Gupta

Arun

2015

Physica Status Solidi (b)

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“…where T 0 is an effective temperature characterising the exponential density of states in the band gap. A more recent paper developing this approach is Schellenberg and Kao (1988). Wronski and Daniel (1981) examined the intensity dependence of the photocurrent in hydrogenated amorphous silicon at a variety off temperatures ranging from 147K to 267K.…”

Section: Experimental Evidence (A) Discussion Of Earlier Investigationsmentioning

confidence: 99%

Universal anomalous exponent of photoconduction

Wilkinson

2011

EPL

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Experiments often show that the photoconductance σ of a semiconductor system and the light intensity I are related by σ ∼ I γ . Conventional theories give a satisfactory explanation for γ = 1 or γ = 1 2 , but anamalous exponents close to γ = 3 4 are often observed. This paper argues that there is a universal anomalous regime for which γ = 3 4 (or γ = 2 3 in two-dimensional samples), resulting from the kinetics of electron-hole recombination being controlled by Coulombic attraction. Because the local electric fields are extremely high, the theory appeals to the 'hot-carrier' model for transport in semiconductors.

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“…Figure (7) exhibit the linearity response of CdO/Si diode, when it is illuminated by different power density white light. It has found a linear relation between photocurrent and incident light with increase incident power this lead to increase photocurrent value with incident power according to the relation [18]:…”

Section: -(I-v) Characteristicsmentioning

confidence: 99%

Physical Properties of Cdo Thin Films Prepared by Spray Pyrolysis Technique

Jbaier¹

2013

ETJ

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In this paper CdO films of 3.8 μm thickness were deposited onto glass and Siwafer substrates by spray pyrolysis technique at 250 o C temperature. The structure, optical and electrical properties were investigated. The structure of the films were studied by X-ray diffraction have polycrystalline structure with (111) preferential orientation. The films have good transmittances in visible and NIRregion, with direct optical band gap (2.5eV).The electrical conductivity was measured as function of temperature and theactivation energy was about(0.155and 0.241) eV.The electrical characterization of CdO/Si hetrojunction diode was investigated by current -voltage studied.The reverse current strongly increased with illumination intensity and voltage bias.

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On the relationship between photoconductivity and light intensity in solids

Abstract: The relationship between photoconductivity sigma ph and light intensity l expressed in the form sigma ph varies as lbeta with beta in the range of 0.5 Show more

Cited by 6 publications

References 16 publications

Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent

Suitability of SnS thin films for photovoltaic application due to the existence of persistent photocurrent

Universal anomalous exponent of photoconduction

Physical Properties of Cdo Thin Films Prepared by Spray Pyrolysis Technique

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