2022
DOI: 10.1007/978-3-031-02063-6_9
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On the Reliability of Computing-in-Memory Accelerators for Deep Neural Networks

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Cited by 6 publications
(2 citation statements)
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“…Depending on the technology, static errors can correspond to programming failures, or temporal fluctuations of the device with a timescale higher than the inference time, such as conductance relaxation for RRAMs [25], or drift for PCRAMs [26]. Dynamic errors can correspond to the inherent noisy behavior of analog devices [10], [17], [27]. In addition, read operations on FeRAMs are destructive [4] and hence errors are always dynamic as the device is re-programmed after each read.…”
Section: Multi-level Non-volatile Memories Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…Depending on the technology, static errors can correspond to programming failures, or temporal fluctuations of the device with a timescale higher than the inference time, such as conductance relaxation for RRAMs [25], or drift for PCRAMs [26]. Dynamic errors can correspond to the inherent noisy behavior of analog devices [10], [17], [27]. In addition, read operations on FeRAMs are destructive [4] and hence errors are always dynamic as the device is re-programmed after each read.…”
Section: Multi-level Non-volatile Memories Modelmentioning
confidence: 99%
“…Therefore, enhancing the robustness of neural networks to noisy multi-level weights is essential to achieve accurate and efficient hardware implementations of ANNs. In addition, variability in NVMs comes from different sources and results in different types of errors, which can have a different impact on the accuracy of ANNs [9], [10].…”
Section: Introductionmentioning
confidence: 99%