On the response time of plasmonic terahertz detectors

Muravev, V. M.; Соловьев, В. Н.; Fortunatov, A. A.; Tsydynzhapov, G. E.; Кукушкин, И. В.

doi:10.1134/s0021364016120080

Cited by 15 publications

(3 citation statements)

References 19 publications

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“…Field effect transistors (FETs) have recently found an unexpected application for the rectification of THz and sub-THz signals beyond their cutoff frequency 1 , 2 . This technology paves the way for on-chip 3 , low-noise 4 , and sub-nanosecond radiation detection 5 , 6 enabling ≳10 Gb/s data transfer rates. Contrary to competing diode rectifiers, FETs offer the possibility of phase-sensitive detection 7 , 8 vital for noise-immune communications with phase modulated signals.…”

Section: Introductionmentioning

confidence: 99%

Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko

Alymov

et al. 2021

Nat Commun

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The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/$$\sqrt{{\rm{Hz}}}$$ Hz ) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.

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Section: Introductionmentioning

confidence: 99%

Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko

Alymov

et al. 2021

Nat Commun

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“…4 are large compared to those of typical graphene photodetectors operating in the terahertz 28,29 and infrared 30 frequency ranges. It should be also noted that plasmonic drag mechanism provides fast photoresponse 31 , as the timescale for decay of photocurrent is the momentum relaxation time in the bulk. All previous calculations carried out at T = 0 have indicated that plasmonic drag responsivity benefits from low carrier density.…”

Section: Frequency ν Thzmentioning

confidence: 99%

Plasmonic drag photocurrent in graphene at extreme nonlocality

Silkin

Svintsov

2021

Phys. Rev. B

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It is commonly assumed that photocurrent in two-dimensional systems with centrosymmetric lattice is generated at structural inhomogenities, such as p-n junctions. Here, we study an alternative mechanism of photocurrent generation associated with inhomogenity of the driving electromagnetic field, termed as 'plasmonic drag'. It is associated with direct momentum transfer from field to conduction electrons, and can be characterized by a non-local non-linear conductivity σ (2) (q, ω). By constructing a classical kinetic model of non-linear conductivity with full account of non-locality, we show that it is resonantly enhanced for wave phase velocity coinciding with electron Fermi velocity. The enhancement is interpreted as phase locking between electrons and the wave. We discuss a possible experiment where non-uniform field is created by a propagating graphene plasmon, and find an upper limit of the current responsivity vs plasmon velocity. This limit is set by a competition between resonantly growing σ (2) (q, ω) and diverging kinetic energy of electrons as the wave velocity approaches Fermi velocity.

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“…Field effect transistors (FETs) recently found an unexpected application for the rectification of THz and sub-THz signals beyond their cutoff frequency [1,2]. This technology paves the way for on-chip [3], low-noise [4], and sub-nanosecond radiation detection [5,6] offering the possibility of 10 Gb/s data transfer rates. Contrary to competing diode rectifiers, FETs offer the possibility of phase-sensitive detection [7,8] vital for noiseimmune communications with phase modulated signals.…”

mentioning

confidence: 99%

Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko,

Xu,

Alymov

et al. 2020

Preprint

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On the response time of plasmonic terahertz detectors

Cited by 15 publications

References 19 publications

Tunnel field-effect transistors for sensitive terahertz detection

Tunnel field-effect transistors for sensitive terahertz detection

Plasmonic drag photocurrent in graphene at extreme nonlocality

Tunnel field-effect transistors for sensitive terahertz detection

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