“…In this study, by dint of separate injection of Cl 2 and source gas of Si 2 H 6 and GeH 4 , the chances for generation of Si chlorides and chlorosilanes and the corresponding Ge species can be ruled out, and their effect on our Si 1 À x Ge x SEG can be excluded. When the surface of S 1 À x Ge x film grown on Si(0 0 1) surface is exposed to Cl 2 gas, two desorption species, GeCl 2 and SiCl 2 , can be mostly generated [12,16]. Decrease in the Ge concentration in our Si 1 À x Ge x SEG films by addition of Cl 2 can be attributed to the discrepancy between desorption energy of GeCl 2 in the Cl 2 / Ge(0 0 1) system, i.e., 25.6 kcal/mol and SiCl 2 in the Cl 2 /Si(0 0 1) system, i.e., 73.0 kcal/mol [17,18].…”