2011
DOI: 10.1134/s1063783411100192
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On the role of hole trapping centers in the interactive mechanism of the trap interaction in anion-defect alumina single crystals

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Cited by 7 publications
(1 citation statement)
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“…When the dose is high the traps of main dosimetric peak are empty and do not compete with deep traps in charge carrier trapping. Deep traps exist in non-irradiated a-Al 2 O 3 :C crystals and are found after intensive irradiation under hightemperature heating (Milman et al, 1998;Nikiforov et al, 2011).…”
Section: High-dose Irradiation Effect On Luminescent and Dosimetric Pmentioning
confidence: 99%
“…When the dose is high the traps of main dosimetric peak are empty and do not compete with deep traps in charge carrier trapping. Deep traps exist in non-irradiated a-Al 2 O 3 :C crystals and are found after intensive irradiation under hightemperature heating (Milman et al, 1998;Nikiforov et al, 2011).…”
Section: High-dose Irradiation Effect On Luminescent and Dosimetric Pmentioning
confidence: 99%