On the solubility and diffusion coefficient of tritium in single crystals of silicon

Ichimiya, T.; Furuichi, Akio

doi:10.1016/0020-708x(68)90067-7

Cited by 103 publications

(49 citation statements)

References 2 publications

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“…͑3͒. Data points from a selection of other experimental studies, [53][54][55][56][57][58][59][60] where the diffusivity of H is believed to be limited by trapping, lie 2-3 decades below the line given by Eq. ͑3͒.…”

Section: Diffusivity Of H During Hydrogenation Treatmentsmentioning

confidence: 99%

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Kleekajai

Jiang

Stavola

et al. 2006

Journal of Applied Physics

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The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiN x surface layer was found to introduce H into the Si bulk with a concentration of ϳ10 15 cm −3 under the best conditions investigated here.

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Section: Diffusivity Of H During Hydrogenation Treatmentsmentioning

confidence: 99%

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Kleekajai

Jiang

Stavola

et al. 2006

Journal of Applied Physics

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“…Other measurements have found agreement with a very low value , with the highest at only a few hundred hydrogen atoms per cubic centimetre at room temperature [222][223][224] . Using any one of these solubilities does not alter the permeation values in Table IV by a more than a factor of two or three.…”

Section: Hydrogenmentioning

confidence: 70%

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Rushton

Aldous

Himsworth

2014

Review of Scientific Instruments

107

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Experiments using laser cooled atoms and ions show real promise for practical applications in quantumenhanced metrology, timing, navigation, and sensing as well as exotic roles in quantum computing, networking and simulation. The heart of many of these experiments has been translated to microfabricated platforms known as atom chips whose construction readily lend themselves to integration with larger systems and future mass production. To truly make the jump from laboratory demonstrations to practical, rugged devices, the complex surrounding infrastructure (including vacuum systems, optics, and lasers) also needs to be miniaturized and integrated. In this paper we explore the feasibility of applying this approach to the Magneto-Optical Trap; incorporating the vacuum system, atom source and optical geometry into a permanently sealed microlitre system capable of maintaining 10 −10 mbar for more than 1000 days of operation with passive pumping alone. We demonstrate such an engineering challenge is achievable using recent advances in semiconductor microfabrication techniques and materials.PACS numbers: 07.07.Df, 37.10.Gh, 07.30.Kf, I. ULTRACOLD QUANTUM TECHNOLOGYSince the first demonstrations of atoms and ions at sub-millikelvin temperatures in the mid-1980s, the field of atomic physics has been revolutionized by laser cooling and trapping as it provides researchers with a method to probe some of the purest and sensitive quantum systems available. This field is still highly productive and recently has put significant emphasis on the practical applications of this technology beyond the laboratory 1,2 . It was evident very early on that ultracold matter would be an indispensable tool in precise timing applications and a recent demonstration 3 has shown extremely low instabilities at the 10 −18 level. The wavelike nature of atoms as they are cooled to lower temperatures can be used to form atomic interferometers that outperform optical counterparts in measurements of accelerated reference frames 4-7 , which are important for inertial guidance systems, but can also provide sensitive measurements of mass, charge and magnetic fields [8][9][10][11] . Greater sensitivity beyond the classical limit is possible via squeezed 12 and entangled states 13-15 , which are also fundamental attributes for quantum computing 16,17 , and long distance quantum networking 18 . Ultracold matter has been used in the emerging field of quantum simulation 19 and is an indispensable tool in determining fundamental constants 20 , testing general relativity 21 and defining measurement standards 22 . Many researchers and industries believe such tools will be a major part of the 'second quantum revolution' in which the more 'exotic' properties of quantum physics are applied for practical applications 23,24 .The field of ultracold matter has reached a matua) m.d.himsworth@soton.ac.uk rity in both experimental methods and theoretical understanding allowing experiments to begin leaving the laboratory 25-27 . These systems are bespoke, rarely take up a ...

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“…The strength of the SEM in the topographical mode lies in the very large depth of field, i. e. the distance D the sample surface can be displaced from the point of focus without the sample surface going out of electron optical focus (see figure [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. The convergence angle α of the electron probe determines the depth of field of an SEM.…”

Section: Surface Blistermentioning

confidence: 99%

“…where k is the Boltzmann constant. About ten years later, Ichimiya and Furuichi found, that in the temperature range of 400 to 550 °C tritium diffusion in crystalline silicon could be described as [18] Experimental and theoretical studies on H-diffusion in silicon at lower temperatures, where trapping of hydrogen at defects and impurities and H 2 -molecule formation are significant, discovered much lower effective diffusivities [19][20][21][22][23][24][25][26][27][28][29][30]. Values for the Hdiffusion coefficient in silicon expected from an extrapolation of the diffusion coefficient of equation to lower temperatures are several orders of magnitude higher than experimentally obtained diffusivities.…”

Section: The Silicon-hydrogen System: a Literature Reviewmentioning

confidence: 99%

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On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Höchbauer

2001

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ZusammenfassungDer sogenannte "Ion-Cut", ein Schichtabspaltungsprozess mittels WasserstoffIonenimplantation und darauffolgender Probenerwärmung ist eine effektive, vielseitige und ökonomische Methode, um Siliziumschichten mit einer Dicke von nur einigen Nanometern von einem Siliziumsubstrat auf andere Materialien zu transferieren. Somit ermöglicht der Ion-Cut die Produktion von Siliziumschichen auf isolierenden Materalien ("silicon-on-insulator" (SOI) AbstractThe "Ion-Cut", a layer splitting process by hydrogen ion implantation and subsequent annealing is a versatile and efficient technique of transferring thin silicon surface layers from bulk substrates onto other substrates, thus enabling the production of silicon-oninsulator (SOI) materials. Cleavage is induced by the coalescence of the highly pressurized sub-surface H 2 -gas bubbles, which form upon thermal annealing. A fundamental understanding of the basic mechanisms on how the cutting process occurs is still unclear, inhibiting further optimization of the Ion-Cut process. This work elucidates the physical mechanisms behind the Ion-Cut process in hydrogen-implanted silicon. The investigation of the cleavage process reveals the cut to be largely controlled by the lattice damage, generated by the hydrogen ion irradiation process, and its effects on the local stress field and the fracture toughness within the implantation zone rather than by the depth of maximum H-concentration. Furthermore, this work elucidates the different kinetics in the H-complex formations in silicon crystals with different conductivity types, and examines the mechanically induced damage accumulation caused by the crack propagation through the silicon sample in the splitting step of the Ion-Cut process. Additionally, the influence of boron pre-implantation on the Ion-Cut in hydrogen implanted silicon is investigated. These studies reveal, that both, the atomic interaction between the boron implant and the hydrogen implant and the shift of the Fermi level due to the electrical activation of the implanted boron have a tremendous enhancing effect on the Ion-Cut process.

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On the solubility and diffusion coefficient of tritium in single crystals of silicon

Cited by 103 publications

References 2 publications

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

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