On the solubility and diffusivity of the intrinsic point defects in germanium

Vanhellemont, Jan; Śpiewak, Piotr; Sueoka, Koji

doi:10.1063/1.2429718

Cited by 83 publications

(77 citation statements)

References 23 publications

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“…No evidence of I has been found in conventional self-diffusion experiments 16 . This is consistent with theoretical predictions that reveal a formation enthalpy of I being 1-2 eV higher than for V [17][18][19][20][21][22][23][24] . However, recent experiments on self-and dopant diffusion in Ge under proton irradiation indicate the dominance of I rather than of V [25][26][27][28][29] .…”

supporting

confidence: 81%

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Radiation-enhanced self- and boron diffusion in germanium

et al. 2013

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We report experiments on proton irradiation enhanced self-and boron (B) diffusion in germanium (Ge) for temperatures between 515 • C and 720 • C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction and the interstitialcy and dissociative diffusion mechanisms. The numerical simulations ascertain concentrations of Ge interstitials and B-interstitial pairs that deviate by several orders of magnitude from their thermal equilibrium values. The dominance of self-interstitial related defects under irradiation leads to an enhanced self-and B diffusion in Ge. Analysis of the experimental profiles yields data for the diffusion of self-interstitials (I) and the thermal equilibrium concentration of BI pairs in Ge. The temperature dependence of these quantities provides the migration enthalpy of I and formation enthalpy of BI that are compared with recent results of atomistic calculations. The behavior of self-and B diffusion in Ge under concurrent annealing and irradiation is strongly affected by the property of the Ge surface to hinder the annihilation of self-interstitials. The limited annihilation efficiency of the Ge surface can be caused by donor-type surface states favored under vacuum annealing but the physical origin remains unsolved.

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supporting

confidence: 81%

“…Mainly the ratio D SD I /(C eq I /C 0 ) = D I determines self-diffusion of Ge under proton irradiation. For the temperature dependence of C eq I /C 0 we assume a prefactor of 2.4 × 10 6 and a formation enthalpy of 3.2 eV that is consistent with recent results of atomistic calculations 20 .…”

Section: Modeling Diffusion Under Irradiationmentioning

confidence: 51%

Radiation-enhanced self- and boron diffusion in germanium

et al. 2013

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“…This has been concluded from self-and foreign-atom diffusion studies 7,21,22,[27][28][29][30] and confirmed by atomistic calculations. 15,23,[30][31][32][33] In particular, the simultaneous diffusion of self-and dopant atoms in isotopically controlled Ge heterostructures have revealed that vacancies in Ge are mainly doubly negatively charged under intrinsic and n-type doping conditions. 7,34 However, the preferred charge state of V under p-type doping is not known.…”

Section: B Motivation Of Diffusion Model and Numerical Simulationsmentioning

confidence: 99%

“…12 In the case when the interstitialcy mechanism mediates B diffusion, the high activation enthalpy would support a high enthalpy for the formation of self-interstitials that agrees with theoretical predictions. [13][14][15][16] According to previous studies on the diffusion of other acceptor dopants such as aluminum ͑Al͒, 17 gallium ͑Ga͒, 18,19 and In, 20 these elements diffuse several orders of magnitude faster than B. 5 The diffusion experiments reported by Dorner et al, 17,20 Södervall et al, 18 and Riihimäki et al 19 yield diffusion activation enthalpies for Al, Ga, and In that clearly exceed the activation enthalpy of self-diffusion.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic and extrinsic diffusion of indium in germanium

Kube

Bracht

Chroneos

et al. 2009

Journal of Applied Physics

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Diffusion experiments with indium ͑In͒ in germanium ͑Ge͒ were performed in the temperature range between 550 and 900°C. Intrinsic and extrinsic doping levels were achieved by utilizing various implantation doses. Indium concentration profiles were recorded by means of secondary ion mass spectrometry and spreading resistance profiling. The observed concentration independent diffusion profiles are accurately described based on the vacancy mechanism with a singly negatively charged mobile In-vacancy complex. In accord with the experiment, the diffusion model predicts an effective In diffusion coefficient under extrinsic conditions that is a factor of 2 higher than under intrinsic conditions. The temperature dependence of intrinsic In diffusion yields an activation enthalpy of 3.51 eV and confirms earlier results of Dorner et al. ͓Z. Metallk. 73, 325 ͑1982͔͒. The value clearly exceeds the activation enthalpy of Ge self-diffusion and indicates that the attractive interaction between In and a vacancy does not extend to third nearest neighbor sites which confirms recent theoretical calculations. At low temperatures and high doping levels, the In profiles show an extended tail that could reflect an enhanced diffusion at the beginning of the annealing.

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“…In the past decade some basic properties of crystalline Ge, among which the formation and migration of point defects (vacancy or self-interstitial), their interactions with impurities, their role in diffusion and activation of dopants, have been the subject of a renewed scientific interest, [1][2][3] mainly motivated by a low-field carrier mobility larger in Ge than in Si. 4 Such an advantage of Ge over Si together with their structural similarities are opening the route for a wider and gainful use of this semiconductor in the next generation of sub-22 nm complementary metal-oxide-semiconductor (C-MOS) microelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Self-interstitials injection in crystalline Ge induced by GeO2nanoclusters

et al. 2011

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The effect of O implantation in crystalline Ge on the density of native point defects has been investigated through transmission electron microscopy and B diffusion experiments. Annealing at 650• C following O implants produces a band of defects (∼5-10 nm), compatible with GeO 2 nanoclusters (NCs). A clear shape transformation from elongated to spherical forms occurs within 2 h, concomitant with a transient enhanced diffusion of B. A large injection of self-interstitials from GeO 2 NCs, giving a vacancy undersaturation, and a long-range migration of self-interstitials are evidenced and discussed.

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On the solubility and diffusivity of the intrinsic point defects in germanium

Cited by 83 publications

References 23 publications

Radiation-enhanced self- and boron diffusion in germanium

Radiation-enhanced self- and boron diffusion in germanium

Intrinsic and extrinsic diffusion of indium in germanium

Self-interstitials injection in crystalline Ge induced by GeO2nanoclusters

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