On the stability of single δ-layer in GaAs

We have investigated the magnetotransport in InP sulphur-doped 5-layer structures. In contrast to GaAs-based systems, it was possible to measure single 5 layers in the concentration range between 10" and 10' m where a metal-insulator transition is expected. At low magnetic fields perpendicular to the sample we observed a giant negative magnetoresistance ( -30%%uo at 4.2 K), followed by an exponential increase in magnetoresistance at high fields. The behavior of the minimum shows certain features of the quantum Hall efFect corresponding to a filling factor of 2. The experimental data are interpreted with the help of a strong-weak-localization transition-phase diagram in a disordered two-dimensional electron gas constructed using a simple lucid model.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

On the stability of single δ-layer in GaAs

Cited by 2 publications

References 13 publications

Untitled

Untitled

Magnetotransport in InP-based dilute single δ layers

Contact Info

Product

Resources

About