2022
DOI: 10.1016/j.apsusc.2021.152101
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On the synergy manipulation between the activation temperature, surface resistance and secondary electron yield of NEG thin films

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Cited by 10 publications
(2 citation statements)
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“…be attributed to the capture of the O atoms released by the reduction of Cu-, V-, and Ti-oxides during baking, which is consistent with the previous study [35,36]. Although the thin is partly activated during measurement, considering that the baking time is just 1 h, it is reasonable to speculate that the film can be fully activated by prolonging the baking time or increasing the baking temperature.…”
Section: Jinst 17 T08003supporting
confidence: 89%
“…be attributed to the capture of the O atoms released by the reduction of Cu-, V-, and Ti-oxides during baking, which is consistent with the previous study [35,36]. Although the thin is partly activated during measurement, considering that the baking time is just 1 h, it is reasonable to speculate that the film can be fully activated by prolonging the baking time or increasing the baking temperature.…”
Section: Jinst 17 T08003supporting
confidence: 89%
“…This would lead to unacceptable levels of ohmic heating as well as beam instabilities [29]. The wakefield impedance was affected by the thickness and resistivity of the NEG films [30,31]. The decrease in thickness and resistivity reduces this undesired resistive effect.…”
Section: Introductionmentioning
confidence: 99%