On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes

Bilkan, Çiğdem; Badalı, Yosef; Fotouhi-Shablou, S.; Azizian‐Kalandaragh, Yashar; Altındal, Ş.

doi:10.1007/s00339-017-1168-y

Cited by 43 publications

(5 citation statements)

References 44 publications

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“…10 and 11 are the results of existence of double GD of BHs in the SD area in the Au/(nanocarbon-PVP)/n-Si SD and Nss at (nanocarbon-PVP)/n-Si interface [26,[32][33][34][35][36]. Similar results on the barrier inhomogeneity and the effects of Nss, Rs and interlayer on the performance electrical caharacteristics were also reported in the literature in the recent years [26,[37][38][39][40][41][42]. According to Card and Rhoderick [36] the energy associated with Nss can be successfully calculated from the forward I-V zone for each temperature, take account of the voltage dependence of the ideal factor (n(V)) and effective BH (e) utilizing the following formulas [36].…”

Section: Resultsmentioning

confidence: 54%

On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage

Sevgili

2021

J Mater Sci: Mater Electron

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Au/(nanocarbon-PVP)/n-Si SDs were fabricated and their current-conduction mechanisms (CCMs) have been examined in elaborative by utilizing current-voltage (I-V) characteristics in temperature range of 60-340K at (±3V) ranges. The values of ideality factor (n) and zero-bias barrier height (ΦBo) determined from the linear-part of semilogarithmic forward bias IF-VF properties based on Thermionic-Emission (TE) theory revealed that decrease in ΦBo and increase in n with deccreasing temperature. Additionally, Richardson constant (A*) value was found several orders lower than its theoretical value. The values of ΦBo and n changed from 0.173 eV to 0.837 eV and 6.60 to 2.85 with increasing temperature from 60 K to 340 K. This positive temperature-coefficient (α) of ΦBo is inagreement with the bandgap of semiconductor or barrier height (BH) for the ideal diode. The calculated higher value of n at low temperatures was attributed to the inhomogeneities of BH rather than the interlayer, surface-states (Nss), and imageforce lowering. With lowing temperatures, CCMs may be governed by tunneling over the lower barriers, via Nss, and generation recombination (GR), as well as TE and hence a complete description of CCM and understanding of the formation BH, remain a compelling problem. Nss-(Ec-Ess) profile was also obtained from IF-VF data for each temperature.

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Section: Resultsmentioning

confidence: 54%

On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage

Sevgili

2021

J Mater Sci: Mater Electron

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“…10. Modified Richardson, ln(I 0 /T 2 )q 2 σ S Inhomogeneities of BH can be caused by poor interface quality, non-uniformity of surface states and dislocations, polymer layer thickness, some phase changes with temperature, and the energy band alignment of lowest molecular orbital of polymer with respect to the conduction band minimum of semiconductor [28,39,42,45,46]. Besides, the photopolymerization is not a homogeneous process.…”

Section: T Dependent I-v Analysismentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device

Özden

Avcı

Pakma

et al. 2022

J Inorg Organomet Polym

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A photopolymer based Al/NOA60/p-Si (metal-polymer-semiconductor) MPS device was fabricated and the current transport properties were investigated by using the forward bias current-voltage (I-V) characteristic in the temperature range of 80-300 K. The cross-sectional structure of polymer/semiconductor was revealed by the scanning electron microscope (SEM) image and it was seen that the NOA60 photopolymer was tidily coated on the p-Si surface. According to the I-V measurements at room temperature, the MPS device exhibits a good rectification ratio of 8140 at ±1V. Temperature-dependent I-V measurements (I-V-T) were analyzed on the basis of thermionic emission (TE) theory and an abnormal increase in zero-bias barrier height (BH) and a decrease in ideality factor (n) was observed with increasing temperature. Additionally, two different linear regions with distinct values from the theoretical value of the Richardson constant (A*) were observed in the conventional Richardson plot. Such deviations from ideal TE theory has been attributed to the effect of BH inhomogeneities.Gaussian distribution (GD) of BH model has applied the I-V-T results and double GD BH with mean values of 0.75±0.08 eV (80 -140 K) and 1.02±0.11 eV (140 -300 K) were calculated. Moreover, the A* value of 64.73 A/cm 2 K 2 was calculated close to the known value of p-Si from the modified Richardson plot. Thus, it has been concluded that the current transport of the Al/NOA60/p-Si MPS device can be explained by TE with double GD BH model for a wide temperature region.

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“…Since the electrical properties of SBDs are often determined by their interface properties, determination of chemical and physical properties of the used polymers in SBDs is very important for scientific and industrial applications [Bilkan et al, 2016;Bilkan et al, 2017]. Unfortunately, in the literature, the number of studies in which the structural and electronic properties of polymers used in SBD fabrication are discussed in detail is quite limited.…”

Section: Figure 1 Schematic Representation Of Sbd With Polymer Interfacial Layermentioning

confidence: 99%

Determination of Structural Properties of Some Important Polymers Used as Interfacial Layer in Fabrication of Schottky Barrier Diodes (SBDs)

Bilkan

2020

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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In this study, structural, electronic and thermal properties of important polymers such as Perylene (PER), Polypyrrole (PPy) and Polyvinyl alcohol (PVA) commonly used in the production of metal-polymer-semiconductor (MPS) type Schottky Barrier Diodes (SBDs) were determined. Since the opto-electronic properties of the materials depend on the electronic band gap, the High Occupied Molecular Orbital (HOMO) and Low Unoccupied Molecular Orbital (LUMO) energies for the polymeric structures and the gap between of energy levels were calculated. In addition, entropy, heat capacity and total thermal energy values were calculated over a wide temperature range and it was determined how thermochemical properties of polymers were affected with temperature. The obtained results showed that while PER has a planar structure, PPy and PVA has a non-planar structure. PER also has the highest chemical reactivity among the polymers examined with large band gap calculated as 3.03 eV. In addition, thermochemical parameters of all polymers increase with increasing temperature almost as linearly.

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On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes

Cited by 43 publications

References 44 publications

On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage

On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon-PVP)/n-Si Schottky barrier diodes in wide range of voltage

Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device

Determination of Structural Properties of Some Important Polymers Used as Interfacial Layer in Fabrication of Schottky Barrier Diodes (SBDs)

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