On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects

Gopalakrishnan, Gokul; Ruzmetov, Dmitry; Ramanathan, Shriram

doi:10.1007/s10853-009-3442-7

Cited by 109 publications

(79 citation statements)

References 28 publications

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“…Although previous researchers have suggested that field or carrier injection alone may be sufficient to induce the transition 21,22 , evidence suggests that in our experimental geometry the transition results most directly from Joule heating. At room temperature, the local power injection immediately prior to the insulatorto-metal transition shown in Fig.…”

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confidence: 54%

Nanoscale imaging and control of resistance switching in VO2 at room temperature

Kim

Frenzel

et al. 2010

Applied Physics Letters

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128

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confidence: 54%

Nanoscale imaging and control of resistance switching in VO2 at room temperature

Kim

Frenzel

et al. 2010

Applied Physics Letters

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128

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“…For small volumes and short time scales, the thermal energy density required to induce the VO 2 phase transition in a thermally isolated device is approximately c p ρ∆T, where c p = 690 J/(kg K) is the heat capacity of insulating VO 2 , ρ = 4.3×10 -3 kg/cm 3 is the material density, and ∆T is the required temperature increase [13,14]. For a device initially at room temperature, this energy density is ~10 2 J/cm 3 , and a typical thin film device with a thickness of less than 100 nm and a footprint of 1 µm 2 will have a switching energy on the order of 10 -11 J.…”

Section: Introductionmentioning

confidence: 99%

“…For a device initially at room temperature, this energy density is ~10 2 J/cm 3 , and a typical thin film device with a thickness of less than 100 nm and a footprint of 1 µm 2 will have a switching energy on the order of 10 -11 J. In comparison, for electrically driven VO 2 devices with switching times on the order of 10 -8 s, the field required to induce the VO 2 phase transition has been reported to be ~10 5 V/cm [6], and the leakage current at the transition is ~10 4 A/cm 2 [5,13]. The corresponding switching energy for the previously mentioned device geometry is 10 -12 J, indicating that athermal switching can potentially be more efficient than thermal switching.…”

Section: Introductionmentioning

confidence: 99%

Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition

Briggs¹,

Pryce²,

Atwater³

2010

Opt. Express

217

118

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Abstract:We have integrated lithographically patterned VO 2 thin films grown by pulsed laser deposition with silicon-on-insulator photonic waveguides to demonstrate a compact in-line absorption modulator for use in photonic circuits. Using single-mode waveguides at λ = 1550 nm, we show optical modulation of the guided transverse-electric mode of more than 6.5 dB with 2 dB insertion loss over a 2-µm active device length. Loss is determined for devices fabricated on waveguide ring resonators by measuring the resonator spectral response, and a sharp decrease in resonator quality factor is observed above 70 °C, consistent with switching of VO 2 to its metallic phase. A computational study of device geometry is also presented, and we show that it is possible to more than double the modulation depth with modified device structures. . 12. T. Ido, S. Tanaka, M. Suzuki, M. Koizumi, H. Sano, and H. Inoue, "Ultra-high-speed multiple-quantum-well electro-absorption optical modulators with integrated waveguides," J. Lightwave Technol. 14(9), 2026-2034 (1996). 13. G. Gopalakrishnan, D. Ruzmetov, and S. Ramanathan, "On the triggering mechanism for the metal-insulator transition in thin film VO2 devices: electric field versus thermal effects," J. (7), 4621-4628 (1996). ©2010 Optical Society of America

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“…Recent developments in synthesis and processing of ferroelectric films are covered in four articles [30][31][32][33]. These include laser transfer processing [30], UV-photon irradiation [31], and orientation-controlled MOCVD on patterned buffer layers [32].…”

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confidence: 99%

“…These include laser transfer processing [30], UV-photon irradiation [31], and orientation-controlled MOCVD on patterned buffer layers [32]. While not completely related to ferroelectrics, we also include a article on the deposition of metal-insulator transition in VO 2 ; a material that may have the potential to act as a ''smart'' electrode in ferroelectric devices [33].…”

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confidence: 99%

Recent developments in ferroelectric nanostructures and multilayers

2009

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The property of ferroelectricity was first reported in 1921 in Rochelle salt (sodium potassium tartrate). Once considered a rare phenomenon limited to a comparatively small class of crystals, the discovery of ferroelectricity in the binary oxide compound barium titanate (BaTiO 3 ) in the mid-1940s paved the way for rapid advances in the search of new materials. Since that time, a great many other ferroelectric compounds and solid solutions have been found and there has been broad interest in ferroelectric materials that has continued essentially uninterrupted until the present time. Ferroelectric materials remain subjects of intensive investigation today for three principal reasons. First, the unique dielectric, pyroelectric, piezoelectric, and electro-optic properties exhibited by ferroelectric crystals, ceramics, composites, and thin films can be exploited in great many devices of commercial importance. Second, apart from their many technological applications, ferroelectric materials as a class exhibit a great diversity of phase transitions that make them ideal objects for scientific investigations into the origins and mechanisms of a wide range of structural transformation phenomena. Finally, advances in thin-film deposition and nanoscale fabrication techniques made over the past two decades have created new possibilities for the integration of these materials into the ever expanding array of microelectronic devices.Ferroelectrics form a sub-group of functional (or smart) materials whose physical properties are sensitive to changes in external conditions such as temperature, pressure, and electric fields. Below some critical temperature T C , the dielectric displacement (electric polarization) spontaneously assumes non-zero values in the absence of any externally applied force. The transition between non-ferroelectric and ferroelectric phases is accompanied by a loss of symmetry, characterized by double-well minima below the transition temperature, resulting in a switchable polarization that is accompanied by a hysteresis in the electric field-dielectric displacement response. As a class of materials, ferroelectrics also exhibit unusually large and nonlinear generalized susceptibilities; their dielectric, piezoelectric, elastic, and other properties display critical behavior near the ferroelectric phase transformation temperature. Ferroelectrics may be regarded as high energydensity materials as well that can be configured to store, release or interconvert electrical and mechanical energy in a well-controlled manner. Their exceptionally large piezoelectric compliances, pyroelectric coefficients, and dielectric susceptibilities can be exploited in a variety of microelectronic devices. Important examples of these include piezoelectric sensors and actuators, pyroelectric thermal imaging devices, high-dielectric constant capacitors, electro-optic light valves, and thin-film memories. Because of their strongly non-linear dielectric response ferroelectrics can be utilized in applications such as frequency-agile pha...

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On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects

Cited by 109 publications

References 28 publications

Nanoscale imaging and control of resistance switching in VO2 at room temperature

Nanoscale imaging and control of resistance switching in VO2 at room temperature

Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition

Recent developments in ferroelectric nanostructures and multilayers

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