On the unimolecular decay and mechanism of formation of Si n + cluster ions

Dzhemilev, N. Kh.; Kovalenko, Sergey; Maksimov, S. E.; Tukfatullin, O. F.; Khozhiev, Sh. T.

doi:10.1134/s1027451015020275

Cited by 3 publications

(2 citation statements)

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“…With nano-sized hydrogenated silicon structure, in particular with dihydride finished nano-sized silicon structure, non-reactive stable nano-circuits are produced. Thus, the set of decay channels for SinO2n + 1Hk-(k = 1-3) clusters indicates their formation in parallel chains of combinatorial synthesis reactions in accordance with the mechanism [9,10].…”

Section: Discussionmentioning

confidence: 99%

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Methods For Generation Of Cluster Particles Of Different Stochiometry

Sh.T.

Kosimov

Murodkobilov

et al. 2020

tajas

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The main purpose from this paper, in semiconductor technology silicon oxide is to study notable of the surface and catalysis process. As a result, cluster fragmentation processes, we obtained information about the emission of the clusters and the chemical and physical properties of the clusters. We found during the study that oxide clusters are heterogeneous clusters. In heterogeneous clusters, the bonds in the main chain are different from the bonds in the side chain, as in organic polymers. We tried to prove on the basis of the analysis of experimental data that the formation, excitation and molecular decomposition of SinO2n + 1Hk- (k = 1-3) cluster ions are based on the model of the combinatorial synthesis mechanism.

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Section: Discussionmentioning

confidence: 99%

“…1. [9][10]. The clusters will be synthesized by ion sputtering of the silicon surface with oxygen or xenon ions while simultaneously exposing the surface to the atmosphere of water molecules.…”

Section: Methodsmentioning

confidence: 99%