Abstract:Abstract. In the present paper we investigate some geometrical properties of the norms in Banach function spaces. Particularly there is shown that if exponent 1/p(·) belongs to BLO 1/ log then for the norm of corresponding variable exponent Lebesgue space we have the following lower estimate
“…Note that function g is bounded function (some sense analogous of sin(f (x))) which belongs to BLO 1/ log (see [6]). Let denote…”
Section: Proof Of Resultsmentioning
confidence: 99%
“…Since g ∈ BLO 1/ log (see [6]), then 1/p(•) ∈ BLO 1/ log . Consequently we have uniformly asymptotic estimation (1.1) for norms χ Q p(•) (see [6]).…”
Section: Proof Of Resultsmentioning
confidence: 99%
“…belongs to BLO 1/ log (see [6]). The function f is a classical example of the function from BM O 1/ log (see [9]).…”
It is well known that if Hardy-Littlewood maximal operator is bounded in spaceIn the present paper we construct exponent p(•), (1 < p − ≤ p + < ∞), 1/p(•) ∈ BLO 1/ log such that Hardy-Littlewood maximal operator is not bounded in L p(•) [0; 1].
“…Note that function g is bounded function (some sense analogous of sin(f (x))) which belongs to BLO 1/ log (see [6]). Let denote…”
Section: Proof Of Resultsmentioning
confidence: 99%
“…Since g ∈ BLO 1/ log (see [6]), then 1/p(•) ∈ BLO 1/ log . Consequently we have uniformly asymptotic estimation (1.1) for norms χ Q p(•) (see [6]).…”
Section: Proof Of Resultsmentioning
confidence: 99%
“…belongs to BLO 1/ log (see [6]). The function f is a classical example of the function from BM O 1/ log (see [9]).…”
It is well known that if Hardy-Littlewood maximal operator is bounded in spaceIn the present paper we construct exponent p(•), (1 < p − ≤ p + < ∞), 1/p(•) ∈ BLO 1/ log such that Hardy-Littlewood maximal operator is not bounded in L p(•) [0; 1].
Drift-current-pulses in semiconductors with vanishing dark conductivity measured according to the method of Kepler and LeBlanc deviate from the expected rectangular pulse shape even under ideal experimental conditions. In this work it will be shown that among other processes the diffusion of current carriers is responsible for the deviation. Under appropriate experimental conditions one is able to measure diffusion-constants in anthracene by a method to be described. Within experimental error the diffusion-constant obtained agrees with the value calculated from the Einsteinrelation using the independently measured drift-mobility. The differences in method from the known techniques used with dark conducting semiconductors are discussed. The measurements succeed only with very good crystals for which quality criteria are given.
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