2014
DOI: 10.1007/s11082-014-0050-9
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On thermodynamic consistency of a Scharfetter–Gummel scheme based on a modified thermal voltage for drift-diffusion equations with diffusion enhancement

Abstract: Driven by applications like organic semiconductors there is an increased interest in numerical simulations based on drift-diffusion models with arbitrary statistical distribution functions. This requires numerical schemes that preserve qualitative properties of the solutions, such as positivity of densities, dissipativity and consistency with thermodynamic equilibrium. An extension of the Scharfetter-Gummel scheme guaranteeing consistency with thermodynamic equilibrium is studied. It is derived by replacing th… Show more

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Cited by 26 publications
(18 citation statements)
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“…The resulting discretized current density expressions feature exponential terms that reflect the characteristics of the doping profile and allow for numerically stable calculations. Over the last decades, several generalizations of the Scharfetter-Gummel method have been proposed for either degenerate semiconductors [52][53][54][55][56][57] or non-isothermal carrier transport with included thermoelectric cross effects [44][45][46][47][48][49][50][51].…”
Section: Non-isothermal Generalization Of the Scharfetter-gummel Schementioning
confidence: 99%
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“…The resulting discretized current density expressions feature exponential terms that reflect the characteristics of the doping profile and allow for numerically stable calculations. Over the last decades, several generalizations of the Scharfetter-Gummel method have been proposed for either degenerate semiconductors [52][53][54][55][56][57] or non-isothermal carrier transport with included thermoelectric cross effects [44][45][46][47][48][49][50][51].…”
Section: Non-isothermal Generalization Of the Scharfetter-gummel Schementioning
confidence: 99%
“…Following Refs. [54,56], we solve the BVP (28) by freezing the degeneracy factor g (n/N c (T )) → g n,K,L to a carefully chosen average. The resulting problem has the same structure as in the non-degenerate case (see above), but with a modified thermal voltage k B T K,L /q → k B T K,L g n,K,L /q along the edge, which takes the temperature variation and the degeneration of the electron gas into account.…”
Section: Modified Thermal Voltage Schemementioning
confidence: 99%
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