Philosophical Magazine Letters
 2011
DOI: 10.1080/09500839.2011.588612
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On triple dislocation nodes observed by TEM in a Ge0.4Si0.6film grown on a slightly deviating (0 0 1)Si substrate

Salem Neily
1
,
S. Youssef
2
,
А. К. Гутаковский
3
et al.
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