On variation of charge carrier mobility under influence of mismatch-induced stress in a heterostructure

Abstract

Purpose The purpose of this paper is to analyze the manufacturing of diffusion-junction heterorectifier with account relaxation of mismatch-induced stress. On the basis of the analysis, the authors formulate recommendations to increase sharpness of the p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. Design/methodology/approach The authors formulate recommendations to increase sharpness of p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. To formulate the recommendations, the authors analyzed the manufacturing of the junction. The authors introduce an analytical approach to analyze the manufacturing. Findings The authors find a possibility to increase sharpness of p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. Originality/value The results are original.