On-wafer inductors for SOS-based RF ICs

Abstract

The effects of additional non-metal coils under SOS inductors on the inductor properties are investigated. Ndiffusion silicon, p-diffusion silicon, and polysilicon layers are used as extra conductors. Expected measurement results are found with inductors with p-diffusion and polysilicon layers. A Q factor of 20 is measured for an SOS inductor with an additional p-diffusion coil. An inductor with an n-diffusion layer gives an unexpectedly poor Q factor of 18. The dramatic conductivity loss of n-diffusion silicon cannot be explained b j traditional temperature-mobility or frequency-mobility dependence. The conductivity loss is caused by the SOS wafer structure and it is strongest for an n-diffusion silicon layer. The number of the vias between the metal coils has an inifluence on the inductor quality. A minor decrease in inductance value and a clear increase in Q factor are found with an increased number of vias. If the number of vias is increased too much, the via resistance compensates the achieved advantages.