2018
DOI: 10.1109/ted.2018.2798575
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On-Wafer Microstrip Meander-Line Slow-Wave Structure at Ka-Band

Abstract: On-wafer microstrip meander-line slow-wave structure at Ka-band

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Cited by 41 publications
(9 citation statements)
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“…28,29) With the application of micromachining technology, micro-mechanical waveguide structures with frequencies of 100 ∼ 1000 GHz (0.3-3 mm wavelengths) can be easily produced on the silicon substrate. 30,31) Based on silicon-based MEMS technology, the parameters of the model can be changed by means of adjusting the thickness of the dielectric layer, the conductor width, the vertical height, and the gap width between the ground plane and the conductor. According to the design rules, the characteristic impedance is set close to 50 Ω.…”
Section: Principle Of Structural Designmentioning
confidence: 99%
“…28,29) With the application of micromachining technology, micro-mechanical waveguide structures with frequencies of 100 ∼ 1000 GHz (0.3-3 mm wavelengths) can be easily produced on the silicon substrate. 30,31) Based on silicon-based MEMS technology, the parameters of the model can be changed by means of adjusting the thickness of the dielectric layer, the conductor width, the vertical height, and the gap width between the ground plane and the conductor. According to the design rules, the characteristic impedance is set close to 50 Ω.…”
Section: Principle Of Structural Designmentioning
confidence: 99%
“…A measured insertion loss of 0.70 dB and a return loss higher than 25 dB with a 3 dB fractional bandwidth of 50.4% at a central frequency of 2.62 GHz were obtained. A microstrip line filter with band stop characteristics is presented in [15]. The miniaturization was achieved with a meander structure.…”
Section: Introductionmentioning
confidence: 99%
“…Наибольший интерес представляют широкополосные усилители типа лампы бегущей волны (ЛБВ) с выходной мощностью порядка десятков W. С целью повышения мощности и КПД таких устройств целесообразно использование пространственно-развитых замедляющих систем (ЗС) и электронных пучков (ЭП) с большим поперечным сечением, в частности, ленточных. В частности, перспективными представляются планарные ЗС на диэлектрических подложках [3][4][5][6][7][8][9]. Они обладают большим замедлением, что позволяет снизить рабочие напряжения, сократить продольные размеры и массу прибора.…”
Section: Introductionunclassified