On-wafer noise-parameter measurements at w -band

Vähä-Heikkilä, T.; Lahdes, Manu; Kantanen, Mikko; Tuovinen, J.

doi:10.1109/tmtt.2003.812554

Cited by 22 publications

(13 citation statements)

References 13 publications

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“…The mechanical impedance tuners are generally connected to an on-wafer probe station using low-loss cables. As the insertion loss of the cables increases with frequency, it becomes difficult to synthesize highly reflective loads in millimeter and sub-millimeter-wave bands [15]. Several other variations of the mechanical impedance tuner based technique have appeared due to the increasing demand for on-wafer noise parameter measurements.…”

Section: Introductionmentioning

confidence: 99%

An Extraction of Two-Port Noise Parameters From Measured Noise Powers Using an Extended Six-Port Network

Ahmed

Yeom

2014

IEEE Trans. Microwave Theory Techn.

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In this paper, we present a formulation for extracting the noise wave correlation matrix of a linear two-port device-under-test (DUT) from measured noise powers using a designed six-port network. The noise powers are measured using a conventional noise figure analyzer. The extracted noise wave correlation matrix can then be converted into conventional two-port noise parameters. The proposed measurement equipment is very simple and leads to a very low cost. The proposed method is experimentally verified through measurements of various DUT samples.Index Terms-Calibration, noise figure, noise parameters, noise waves correlation matrix, six-port network. 0018-9480

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Section: Introductionmentioning

confidence: 99%

An Extraction of Two-Port Noise Parameters From Measured Noise Powers Using an Extended Six-Port Network

Ahmed

Yeom

2014

IEEE Trans. Microwave Theory Techn.

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“…Impedance tuners are commonly used in both load-pull and noise parameter measurements of transistors at microwave and millimeter-wave frequencies, e.g [1][2][3]. Typically, these are mechanical devices with either coaxial or waveguide structures, and use motors for automatic control.…”

Section: Introductionmentioning

confidence: 99%

RF MEMS impedance tuners for 6–24 GHz applications

Vähä-Heikkilä

Caekenberghe

Varis

et al. 2007

Int J RF and Microwave Comp Aid Eng

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RF MEMS tuners with wide impedance coverage have been developed for 6-24 GHz noise parameter and load-pull measurement systems. The tuners are based on triple-, double-, and single-stub topologies loaded with switched MEMS capacitors. Several designs are presented, and they use 10-13 switched MEMS capacitors to produce 1024-8192 (2 10 -2 13 ) different impedances. The measured impedance coverage agrees well with simulations and it is the widest ever measured impedance coverage from any planar tuner to-date.

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“…Compared with its small-signal model, the transistor's noise model is more difficult to construct, for it demands accurate measurements of the sensitive, and thus elusive, noise parameters, which in turn impose some stringent requirements on the noise measurement setup [7]- [14]. Of the many expressions for a twoport circuit's noise parameters, it is the minimum noise temperature T min , noise ratio N , and optimum reflection coefficient Γ opt (= γ opt exp(j θ opt )), which is a complex number, that will be used in this paper.…”

Section: Introductionmentioning

confidence: 99%

An Analytical Approach on the Determination of Generator Reflection Coefficients Used in the Noise-Parameter Measurement

Sang

2007

Int J Infrared Milli Waves

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In performing microwave and millimeter-wave noise-parameter measurements, a set of generator reflection coefficients and their corresponding noise temperatures need to be measured first. Allowing measurement errors, values of these generator reflection coefficients will affect the accuracy of final results. Though simulation alone can be used to find out on the Smith chart the preferred pattern of the generator reflection coefficients, its analytical counterpart has not been explored yet. This paper intends to derive the related mathematical expressions, thus complements and strengthens the simulation method.

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On-wafer noise-parameter measurements at w -band

Cited by 22 publications

References 13 publications

An Extraction of Two-Port Noise Parameters From Measured Noise Powers Using an Extended Six-Port Network

An Extraction of Two-Port Noise Parameters From Measured Noise Powers Using an Extended Six-Port Network

RF MEMS impedance tuners for 6–24 GHz applications

An Analytical Approach on the Determination of Generator Reflection Coefficients Used in the Noise-Parameter Measurement

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