On-wafer photoconductive sampling of MMICs

Huang, Sheng‐Lung; Chauchard, E. A.; Lee, C.H.; Hung, H.-L.A.; Lee, T.T.; Joseph, Thomas

doi:10.1109/22.179895

Cited by 14 publications

(1 citation statement)

References 10 publications

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“…For the PC sampling gate, however, photovoltaic current generated at the imperfect ohmic contacts by the gating laser amplitude fluctuation appears to be the dominant noise source [13]. In general, the laser-induced noise has a 1/f spectrum at low frequency and can be reduced by increasing modulation frequency [14,15]. However, the signal amplitude also drops at high modulation frequency.…”

Section: Introductionmentioning

confidence: 99%

Modulation bandwidth and noise limit of photoconductive gates

et al. 1996

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The modulation bandwidth and noise limit of a photoconductive sampling gate are studied by reducing the parasitic capacitance and leakage current of the sampling circuit using an integrated junction field-effect transistor (JFET) source follower. The modulation bandwidth of the photoconductive sampling gate is limited by the external parasitic capacitance, and its efficiency is found to saturate at a laser gating power of about 1 mW. It is determined that the noise of the photoconductive sampling gate is dominated by the photovoltaic current due to the gating laser amplitude fluctuation. A minimum noise level of 4 nV Hz-1/2 has been measured, and an enhancement in signalto-noise ratio by a factor of >45 has been achieved after the integration of the source follower with the photoconductive sampling gate. The JFET source follower serves to increase the modulation bandwidth of the photoconductive sampling gate by about 15 times and buffer the charge of the measured signal using its extremely high gate input impedance. The performance of the photoconductive sampling gate in regard to invasiveness and gating efficiency has been optimized, while a picosecond temporal resolution has been maintained and the signal-to-noise performance has been enhanced using a gating laser power as low as 10 #W.

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Section: Introductionmentioning

confidence: 99%

Modulation bandwidth and noise limit of photoconductive gates

et al. 1996

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Microwave Measurement Instrumentation

Aditya

Alphones

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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The sections in this article are Microwave Radiometry Microwave Spectroscopy Measurement of Permittivity and Permeability Time‐Domain Measurements Sweep Frequency Measurement of Scattering Parameters Six‐Port Reflectometer Power Measurement

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Optoelectronic techniques for ultrafast device network analysis to 700 GHz

Frankel

1996

Opt Quant Electron

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On-wafer photoconductive sampling of MMICs

Cited by 14 publications

References 10 publications

Modulation bandwidth and noise limit of photoconductive gates

Modulation bandwidth and noise limit of photoconductive gates

Microwave Measurement Instrumentation

Optoelectronic techniques for ultrafast device network analysis to 700 GHz

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